IPB35N10S3L26ATMA1 vs BSZ0901NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB35N10S3L26ATMA1 sa pamamagitan ng Infineon at BSZ0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB35N10S3L26ATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | — |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | 8 |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| Technology | — | OptiMOS trench N-channel MOSFET |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Packhaging | — | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |