IPC100N04S5L1R5ATMA1 vs IAUC120N06S5N017ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5N017ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ NakahandaInfineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC100N04S5L1R5ATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 757 A |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55°C to +175°C |
| Packhaging | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-43 (TDSON-8 EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260C peak reflow) | MSL1 (260°C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Tindminan RoHS | Compliant (Green Product) | — |
| Avalanche Tested | 100% | — |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 95.9 nC |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | — | 84 pF |
| Output Capacitance (Coss) | — | 1.507 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |
| RoHS Compliance | — | Green Product (RoHS compliant) |