IPD028N06NF2SATMA1 vs ISC045N03L5SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD028N06NF2SATMA1 sa pamamagitan ng Infineon at ISC045N03L5SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 ✓ NakahandaInfineon
ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD028N06NF2SATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD028N06NF2SATMA1 | ISC045N03L5SATMA1 |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology Family | OptiMOS 5 60V | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 24 A | 18 A |
| Continuous Drain Current (ID) at TC=25°C | 139 A | 63 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation at TA=25°C | 3 W | — |
| Power Dissipation at TC=25°C | 150 W | — |
| Hanay ng Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TO252-3 (DPAK) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain-tab, Source) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Packing | Tape & Reel (T&R) | — |
| Technology | — | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | — | 30 V |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +150 °C |