IPD70N10S312ATMA1 vs IPD90N06S407ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S312ATMA1 sa pamamagitan ng Infineon at IPD90N06S407ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD70N10S312ATMA1 IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 ✓ Nakahanda
Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70N10S312ATMA1 IPD90N06S407ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IPD70N10S312ATMA1 —
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode N-Channel Enhancement Mode
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 70 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Packhaging PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101 Qualified
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D at T_C) — 90 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) Max at V_GS=10 V, I_D=90 A — 6.9 mOhm
Gate Threshold Voltage (V_GS(th)) — 4 V at 40 uA
Total Gate Charge (Q_G) at V_GS=10 V — 56 nC
Maximum Power Dissipation (P_D at T_C) — 79 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Storage Temperature — [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS — Yes (Green Product)
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 C peak reflow)
Avalanche Rating — 100% Avalanche Tested

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