IQE012N03LM5CGATMA1 vs BSC019N08NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon at BSC019N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE012N03LM5CGATMA1 | BSC019N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Technology / Process | OptiMOS 5 trench | — |
| Packhaging | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 |
| Manufacturer | — | Infineon Technologies |
| Technology | — | OptiMOS 5 (N-channel trench) |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TA=25C | — | 28 A |
| Continuous Drain Current (ID) at TC=25C | — | 237 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.0 V |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 214 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C |
| Avalanche Rated | — | Yes |