IQE036N08NM6CGATMA1 vs IQE050N08NM5CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE036N08NM6CGATMA1 sa pamamagitan ng Infineon at IQE050N08NM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 ✓ NakahandaInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE036N08NM6CGATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, Tj) | — |
| Packhaging | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-1 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 5 (Source-Down) |
| Configuration | Single N-channel, Source-Down | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Temperature na Operasyon | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |