IRFZ44NPBF vs IRFZ44NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NPBF sa pamamagitan ng Infineon at IRFZ44NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NPBF IRFZ44NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC 42 nC
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-220AB (3-pin + tab) D2PAK (TO-263)
Uri ng Pagpapasok Through Hole Surface Mount
Technology HEXFET (Advanced Process) HEXFET
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Tindminan RoHS Compliant Compliant
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 49 A
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Drain-Source On-Resistance RDS(on) max — 17.5 mOhm at VGS=10V
Power Dissipation (TC) — 94 W
Power Dissipation (TA) — 3.8 W
Hanay ng Temperature na Operasyon — -55C to +175C
Lead-Free (PBF suffix) — Yes

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