ISC011N03L5SATMA1 vs BSC034N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC011N03L5SATMA1 sa pamamagitan ng Infineon at BSC034N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISC011N03L5SATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| Packhaging | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 |
| Gate Drive | Logic-level compatible | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 74 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |