ISC015N06NM5LF2ATMA1 vs IPD50N04S408ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N06NM5LF2ATMA1 sa pamamagitan ng Infineon at IPD50N04S408ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC015N06NM5LF2ATMA1 ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 ✓ Nakahanda
Infineon
IPD50N04S408ATMA1 IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC015N06NM5LF2ATMA1 IPD50N04S408ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 Linear FET 2 (N-Channel) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 32 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 217 W —
On-Resistance RDS(on) max at VGS=10V 1.55 mΩ —
On-Resistance RDS(on) at VGS=10V (typ) 1.3 mΩ —
Gate Threshold Voltage (VGS(th)) 3 V —
Gate-Source Voltage Rating ±20 V —
Reverse Recovery Charge (Qrr) 1.3 nC —
Input Capacitance (Ciss) 6.9 nF —
Output Capacitance (Coss) 1.3 nF —
Reverse Transfer Capacitance (Crss) 55 pF —
Total Gate Charge (Qg) 90 nC —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8 FL (5x6 mm) PG-TO252-3-313 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Polarity — N-Channel
Mode — Enhancement-mode
Drain-Source Voltage (V DS) — 40 V
Continuous Drain Current (I D, Tc) — 50 A
Power Dissipation (P D, Tc) — 46 W
Hanay ng Temperature na Operasyon — -55 °C to +175 °C
Level ng MSL — MSL1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % Avalanche tested
Green Package (RoHS) — RoHS compliant
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical]
On-State Resistance (R DS(on)) — [DATA_NEEDED: R DS(on) at V GS = 10 V]
Total Gate Charge (Q G) — [DATA_NEEDED: Q G typical]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita