K4A8G085WB-BCRC vs K4A8G085WB-BICR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCRC sa pamamagitan ng Samsung Electronics at K4A8G085WB-BICR sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ NakahandaSamsung Electronics
K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial
K4A8G085WB-BICR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCRC | K4A8G085WB-BICR |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 1G x 8 | 1G x 8 |
| Rate ng Data | 2400 Mbps | 2400 Mbps |
| Volte ng Pagbibigay | 1.2 V | 1.2 V (VDD/VDDQ) |
| Temperature na Operasyon | 0°C to 85°C | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | 8192 |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Number of Banks | — | 16 |
| Bilang ng Pin | — | 78 |
| Uri ng Pagpapasok | — | Surface Mount |
| Temperature Grade | — | Industrial (I-grade) |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: exact temperature range for BICR industrial suffix] |
| Die / Process | — | Samsung 8Gb B-die DDR4 |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Refresh Management | — | Row refresh, auto-refresh and self-refresh supported |