NT5CC256M16CN-FLB vs NT5CC256M16ER-EK Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16CN-FLB sa pamamagitan ng Nanya Technology at NT5CC256M16ER-EK sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16CN-FLB - 4Gb DDR3L SDRAM | Nanya Technology
NT5CC256M16CN-FLB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16CN-FLB | NT5CC256M16ER-EK |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb (256M x 16) | 4 Gbit |
| Volte ng Pagbibigay | 1.35 V (DDR3L) | 1.35 V |
| Rate ng Data | 1866 Mbps (PC3-14900) | 933 MHz (DDR3L-1866) |
| I/O Width | 16 bits | — |
| Internal Banks | 8 | — |
| Latensya ng CAS | 9, 10, 11, 13 | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | 8, 4 (with burst chop) |
| Packhaging | 96-ball FBGA | TFBGA-96 |
| Temperature na Operasyon | -40°C to +95°C (case) | 0°C to +95°C |
| RoHS | Compliant | — |
| Self-Refresh | Yes (auto and manual) | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Organisasyon | — | 256M x 16 |
| Interface | — | Parallel |
| Uri ng Pagpapasok | — | Surface Mount |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Auto Self-Refresh | — | Yes |
| Dynamic ODT | — | Yes |