NT5CC256M16CP-EK vs NT5CB256M16CP-EK Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16CP-EK sa pamamagitan ng Nanya Technology at NT5CB256M16CP-EK sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
NT5CC256M16CP-EK ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16CP-EK | NT5CB256M16CP-EK |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Volte ng Pagbibigay | 1.35V (DDR3L) / 1.5V (DDR3) | 1.35V (1.425V to 1.575V) |
| Rate ng Data | 2133 Mb/s per pin | DDR3-2133 (CL14) |
| Packhaging | 96-ball TFBGA | 96-ball TFBGA |
| Temperature na Operasyon | 0°C to +95°C (TC) | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C |
| Number of Banks | 8 | — |
| Refresh Cycles | 8192 | — |
| CAS Latency (CL) | Programmable (e.g., 9, 10, 11, 12, 13) | 9, 10, 11, 12, 13, 14 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Interface | Differential clock (CK, CK#) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| WRITE Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Posted CAS Additive Latency | — | Programmable |
| Internal Banks | — | 8 (BA0-BA2) |
| REACH | — | Compliant |
| Uri ng Pagpapasok | — | Surface Mount |