NT5CC256M16ER-FLNA vs MT41K256M16TW-107:P Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16ER-FLNA sa pamamagitan ng Nanya Technology at MT41K256M16TW-107:P sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5CC256M16ER-FLNA - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16ER-FLNA ✓ NakahandaMicron Technology
MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16TW-107:P ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5CC256M16ER-FLNA | MT41K256M16TW-107:P |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | — |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | 1.35V |
| I/O Voltage | 1.5 V | 1.35V |
| Rate ng Data | 1866 Mbps (max) | 1866 MT/s |
| Packhaging | 96-ball TFBGA | 96-FBGA (8x14mm) |
| Number of Terminals | 96 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (commercial/industrial) | — |
| Latensya ng CAS | Programmable (e.g., 13, 14) | 13 |
| Burst Length | 8, 4 (with burst chop) | 8 |
| Number of Banks | 8 | — |
| Refresh | Auto and self refresh | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Laki ng Memory | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 933 MHz |
| tRCD | — | 20 ns |
| tRP | — | 20 ns |
| Temperature na Operasyon | — | 0°C to +95°C |
| Uri ng Pagpapasok | — | Surface Mount |
| Tindminan RoHS | — | Compliant |