RTAX2000DL-CQ352B vs RTAX2000SL-1CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000DL-CQ352B sa pamamagitan ng Microchip Technology at RTAX2000SL-1CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ NakahandaMicrochip Technology
RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000DL-CQ352B | RTAX2000SL-1CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 32,256 |
| CLBs | 19,712 | — |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control |
| Programming Technology | Nonvolatile antifuse | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Packhaging | 352-terminal ceramic CQFP, metal-sealed | 352-pin ceramic CQFP (CQ352) |
| Terminal Pitch | 0.500 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Configuration | Live at power-up, no external boot PROM required | Live at power-up, single chip (antifuse) |
| Application Domain | Space flight systems | Space flight systems |
| Family | — | RTAX-S/SL Radiation-Tolerant FPGA |
| CLB Count | — | 21,504 |
| Core Supply Voltage | — | 1.5 V (1.425 V to 1.575 V) |
| Process Technology | — | CMOS, antifuse OTP interconnect |
| Radiation Tolerance | — | Radiation-tolerant (space flight grade) |
| Clocking | — | Segmentable clock resources, chip-wide highway routing |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O bank voltage] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating] |
| Level ng MSL | — | Not applicable (ceramic package) |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |