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MSN3700-CS2FO - 32x QSFP28 100GbE 1U Switch | NVIDIA Mellanox
The NVIDIA Mellanox MSN3700-CS2FO is a Spectrum-2 based 100GbE Open Ethernet switch system in a compact 1U rack form factor, featuring 32 QSFP28 ports delivering 6.4 Tbps of switching capacity, an x86 CPU, dual AC power supplies, ONIE boot loader, and P2C (port-to-cloud) airflow in a standard-depth chassis. A data center leaf/spine switch is a network device that aggregates traffic from top-of-rack leaf switches and routes it between spine layers in cloud-scale layer-2 and layer-3 networks. The MSN3700-CS2FO belongs to the NVIDIA Spectrum SN3000 switch family, which sits within the broader hierarchy of Ethernet switching systems -> Open Ethernet bare-metal switches -> data center aggregation/spine platforms. Key features include 32 QSFP28 ports each supporting up to 100GbE (with breakout to 4x25GbE per port typical for the SN3700C class), a forwarding rate of 8.33 Bpps, and low latency of approximately 425 ns according to distributor specifications. The Spectrum-2 ASIC provides consistent low latency and advanced software-defined networking features, making the platform suited to web-scale IT, cloud, hyperconverged storage, and data analytics workloads. Technically, the switch is delivered as a bare-metal Open Ethernet platform with an ONIE (Open Network Install Environment) boot loader, allowing operators to install a NOS of their choice such as Cumulus Linux, SONiC, or other ONIE-compatible operating systems. The x86 management CPU enables local NOS execution, while dual redundant AC power supplies and front-to-back P2C airflow support hot-aisle/cold-aisle data center deployments. A rail kit is included for standard 19-inch racks. Typical applications include 100G spine and leaf-spine aggregation in cloud data centers, high-density 25G server connectivity via port breakouts, hyperconverged storage fabrics, and big data analytics clusters where low-latency, high-throughput east-west traffic is critical. A key design consideration: this OPN is listed by NVIDIA as End of Life (EOL) and no longer orderable through normal channels, so new deployments should evaluate current Spectrum platforms or refurbish/secondary-market stock with warranty coverage. This page synthesizes distributor listings, the NVIDIA SN3000 series datasheet, hardware user manual ordering information, and drop-in alternative analysis not found on any single manufacturer page.
MSN3700-CS2RO - 32x100GbE QSFP28 Spectrum-2 Switch | NVIDIA
The NVIDIA (Mellanox) MSN3700-CS2RO is a Spectrum-2 based 1U Open Ethernet switch with 32 QSFP28 ports supporting up to 100Gb/s per port, a total switching capacity of 12.8 Tb/s (full duplex), and forwarding rates of up to 8.33 billion packets per second (Bpps). It ships as a bare-metal ONIE-enabled system with an x86 CPU and dual AC power supplies. A data center Ethernet switch is a network device that forwards Layer 2 and Layer 3 frames and packets between servers, storage systems, and upstream networks. Within the networking hierarchy, the switch sits above the physical cabling layer and below the routing overlay, forming the leaf and spine fabric of modern cloud and enterprise data centers. Open Ethernet switches such as this one ship without a pre-installed network operating system, allowing installation of SONiC, Cumulus Linux, or another NOS through the ONIE boot loader. Key features include the Spectrum-2 ASIC (second-generation Spectrum family), 32 QSFP28 ports spanning speeds from 1GbE to 100GbE, L3 managed operation, and connector-to-power (C2P) airflow for hot-aisle exhaust compatibility. The dual redundant AC power supplies accept 100-264 V AC input, and the standard-depth 1U chassis is rack-mountable with the included rail kit. The Spectrum-2 architecture is purpose-built for leaf, spine, and super-spine topologies, providing ultra-low latency and high pipe efficiency for east-west traffic. Port speeds from 1GbE to 400GbE across the SN3000 series allow full-rack server connectivity at any speed with a single platform family. Typical applications include cloud data center leaf-spine fabrics, enterprise core networks, high-performance computing interconnects, and storage area network fabrics requiring predictable 100GbE throughput. Design consideration: verify airflow direction and PSU type before ordering, since the SN3000 family uses airflow and power suffixes (CS2RO = C2P airflow, 2x AC) that are not field-interchangeable in some deployments. This page synthesizes distributor availability, same-family drop-in system alternatives, and practical deployment notes not found in the NVIDIA datasheet.
MSN3700-VS2FC - 32x200GbE Spectrum-2 Switch | NVIDIA
The NVIDIA (Mellanox) MSN3700-VS2FC is a 1U rack-mount Open Ethernet switch built on the Spectrum-2 ASIC, delivering 32 QSFP56 ports at up to 200GbE each (12.8 Tb/s aggregate throughput) with two AC power supplies, standard-depth chassis, x86 management CPU, P2C (port-to-connector) airflow, and Cumulus Linux pre-installed. A data center switch is the top-of-rack or spine-layer device that interconnects servers, storage, and other switches in a leaf/spine fabric. Within the network equipment hierarchy, the MSN3700-VS2FC belongs to the NVIDIA Spectrum SN3000 series of Open Ethernet switch systems, positioned above 100G access platforms and alongside the modular SN3000 chassis products for cloud-scale deployments. Key features include 32x QSFP56 ports supporting 1GbE through 400GbE speeds per the SN3000 series datasheet, full 12.8 Tb/s non-blocking fabric for rack-scale connectivity, redundant hot-swappable AC power supplies, and a Cumulus Linux operating environment enabling automation with standard DevOps tooling. The SN3000 series is purpose-built for leaf, spine, and super-spine data center topologies. The Spectrum-2 ASIC provides flexible port speeds spanning 1GbE to 400GbE, allowing a single platform to serve mixed-speed fabrics. The x86 management CPU runs Cumulus Linux natively, supporting REST APIs, Ansible, and telemetry for cloud-style operations. P2C airflow matches typical forward-flow rack cooling, and the standard-depth chassis fits common 1U racks with the included rail kit. Typical applications include 200G spine switches in hyperscale and enterprise data centers, VAST Data and high-performance NVMe storage fabric interconnects (the MSN3700-VS2FC is a listed VAST Data OPN), and AI/ML cluster leaf fabrics where 100G/200G server connectivity is required. Design consideration: exact power consumption figures are not published in the available evidence; confirm AC power budget and PSU redundancy requirements with the manufacturer datasheet before finalizing rack power planning. This page synthesizes distributor pricing, family cross-references, and practical deployment notes not consolidated in the manufacturer datasheet.
MSN3700-VS2FO - 32x200GbE Spectrum-2 1U Switch | NVIDIA
The NVIDIA MSN3700-VS2FO (SN3700 series) is a Spectrum-2 based 1U Open Ethernet switch delivering 32 x QSFP56 ports at 200GbE, 12.8 Tb/s switching capacity, and 8.33 Bpps forwarding rate with just 425 ns latency. A fixed-configuration data center switch is a complete networking system that aggregates and routes high-speed Ethernet traffic between server racks and the network spine. Within the hierarchy of data center fabric equipment, it occupies the leaf/spine/super-spine tier above top-of-rack (ToR) access switches, providing the high-port-count, low-latency backbone that modern cloud and AI clusters require. Key features include 32 QSFP56 ports supporting speeds from 10GbE to 200GbE per port, the 2nd-generation NVIDIA Spectrum-2 ASIC purpose-built for leaf/spine/super-spine topologies, and an ONIE boot loader enabling installation of open network operating systems such as Cumulus Linux. The unit ships with two hot-swappable AC power supplies, an x86 management CPU, standard-depth chassis, power-to-connector (P2C) airflow, and a rail kit. Technically, the Spectrum-2 silicon provides a shared-memory, cut-through forwarding architecture that achieves consistent sub-microsecond latency regardless of port mix, making it well suited to east-west traffic patterns in machine learning and high-performance computing fabrics. Each port can operate independently at 10/25/40/50/100/200GbE, allowing a single chassis to serve mixed-speed uplinks and downlinks without oversubscription hardware changes. Typical applications include 200G spine/super-spine switching in cloud data centers, AI training cluster back-end fabrics, and high-density storage area network aggregation. The 12.8 Tb/s non-blocking capacity supports full-rack GPU node connectivity at line rate. Design consideration: airflow direction is fixed at order time (P2C on this SKU); verify rack cooling direction before deployment, and confirm the 0 to 40 C operating envelope against your facility conditions. This page synthesizes distributor availability, same-platform drop-in variant comparisons, and practical deployment notes not found in the manufacturer datasheet.
MSN3700-VS2RC - 200GbE 32xQSFP56 Spectrum-2 Switch | NVIDIA
The NVIDIA (Mellanox) MSN3700-VS2RC is a Spectrum SN3700 series 1U Open Ethernet switch delivering 32 QSFP56 ports of 200GbE connectivity with 12.8 Tb/s aggregate throughput and 8.33 Bpps packet processing capacity, housed in a standard-depth 1U rack-mount chassis with two AC power supplies and C2P (connector-to-panel) airflow. A data center Ethernet switch is a networking device that forwards Ethernet frames between endpoints at Layer 2 and Layer 3, forming the leaf, spine, and super-spine tiers of modern data center fabric topologies. Within the power/performance hierarchy of networking equipment, the switch platform sits above NICs and below full routing platforms, and the SN3700 belongs to the third generation of NVIDIA Mellanox Spectrum switch systems purpose-built for leaf/spine/super-spine roles. Key features include the Spectrum-2 ASIC (2nd generation), port speeds spanning 1GbE to 400GbE, full 32-port 200GbE density in a single rack unit, and an onboard x86 CPU for hosting the pre-installed Cumulus Linux network operating system. This Open Ethernet design frees operators from vendor-locked NOS choices, supporting SONiC and other open network operating systems alongside Cumulus Linux. The Spectrum-2 architecture provides deep port buffers, virtualization-friendly features, and scale-out fabric capability that enables full rack connectivity to any server at any speed. Rich network virtualization support makes the platform suitable for large enterprises and cloud data centers consolidating multiple overlay networks on shared physical infrastructure. Typical applications include 200GbE spine and super-spine tiers in hyperscale and cloud fabrics, high-density leaf deployments aggregating 100G server connections, and high-performance computing (HPC) interconnects where the 8.33 Bpps processing rate sustains lossless traffic at line rate. Design consideration: verify rack power (2x AC PSUs) and front-to-back C2P airflow direction against cold-aisle/hot-aisle layout before ordering, since airflow direction is fixed per SKU. For Cumulus Linux deployments, confirm NOS licensing and QSFP56 breakout cable compatibility (2x100G, 4x50G) for mixed-speed fabrics. This page synthesizes distributor pricing, family-variant comparisons, and practical deployment notes not found together in the manufacturer datasheet.
MSN3700-VS2RO - 200GbE 32x QSFP56 Spectrum-2 Switch | NVIDIA
The NVIDIA Mellanox MSN3700-VS2RO is a 200GbE Open Ethernet switch based on the Spectrum-2 ASIC, delivering 12.8 Tbps of switching capacity through 32 QSFP56 ports in a 1U rack-mount chassis with standard depth, connector-to-power (C2P) airflow, dual AC power supplies, an x86 CPU, and an ONIE boot loader. A data center Ethernet switch is a managed networking device that aggregates and routes traffic between servers at the leaf, spine, or super-spine layer of a fabric hierarchy. Within the broader networking hierarchy, the MSN3700-VS2RO sits in the top-of-rack or end-of-row switch category, which in turn belongs to the Ethernet switch family of network switching equipment. Open Ethernet switches such as this one ship with ONIE, allowing installation of a choice of network operating systems rather than a locked-in vendor OS. Key features include 32 QSFP56 ports supporting speeds from 1GbE up to 200GbE per port, 12.8 Tbps non-blocking capacity, redundant hot-swappable 2x AC power supplies, and connector-to-power airflow for predictable thermal management in data center hot/cold aisle layouts. The integrated x86 management CPU enables full-featured NOS deployment including NVIDIA Onyx or Cumulus Linux. Technically, the Spectrum-2 generation ASIC provides deep buffering and flexible port bifurcation (for example, a 200G port split into 2x100G or 4x50G), enabling mixed-speed rack connectivity. Port speeds span 1GbE to 400GbE across the SN3000 series platform family, giving fabric designers flexibility in leaf/spine blocking ratios. Typical applications include high-density 100G/200G leaf-spine data center fabrics, super-spine aggregation layers, cloud and enterprise top-of-rack aggregation, and storage network backends where 200GbE uplinks reduce oversubscription. When deploying, verify rack airflow direction compatibility (C2P versus P2C variants exist in the same family) and confirm AC power feed redundancy before installation. This page synthesizes distributor pricing, drop-in SKU alternatives, and practical deployment notes not found in the manufacturer datasheet.
MT7981B Wi-Fi 6 Router SoC | MediaTek
The MediaTek MT7981B is a highly integrated Wi-Fi 6 generation wireless network router system-on-chip (SoC) designed for high-performance home entertainment, home automation, and router platforms. The supplied data identifies it as a MediaTek wireless network router SoC, but does not provide verified CPU frequency, memory interface, Ethernet speed, radio configuration, package dimensions, pin count, or operating-temperature values. Its platform role is therefore best understood from the manufacturer-linked MT7981 Wi-Fi 6 platform datasheet and the provided product descriptions rather than from guessed numerical specifications. A wireless network router SoC is an integrated semiconductor platform that combines processing, networking, and wireless-control functions into one device. In the product hierarchy, an SoC is a semiconductor, while a router SoC belongs to the broader networking and communications IC category. The MT7981B is intended to support Wi-Fi 6 router designs, where it can serve as the central platform for packet processing, wireless configuration, and connected-home functions. The provided results describe it as suitable for high wireless performance, home entertainment, and home automation. The strongest verified feature statement is Wi-Fi 6 generation support. Other verified search context associates MT7981B with high-performance, developer-friendly router platforms and identifies MT7981B-based systems as suitable for AX3000-class Wi-Fi 6 hardware. However, the supplied data does not establish that MT7981B itself contains every radio used in an AX3000 router; external MediaTek wireless components may be used in a complete platform. Separate quantities such as CPU cores, clock rate, RAM, flash, Ethernet ports, 2.5G interfaces, package, and thermal limits require confirmation from the manufacturer datasheet. Typical MT7981B applications include Wi-Fi 6 home routers, connected-home gateways, home entertainment networking, and automation controllers. In a router design, the device would be placed at the center of the network architecture and would require board-level support for memory, Ethernet interfaces, radio companions, power delivery, clocking, boot storage, and firmware. The provided data does not include a reference schematic, recommended companion-chip list, or electrical limits, so those implementation details should not be inferred. Design planning should begin with the exact package and pin assignment in the applicable MediaTek MT7981 datasheet, followed by thermal, electromagnetic, power-integrity, and signal-integrity reviews. Because this is a digital communications SoC, SOA is not applicable. The available public results should be treated as discovery references rather than a substitute for the manufacturer’s complete engineering datasheet and programming documentation. This product page summarizes the verified MT7981B identity, Wi-Fi 6 router positioning, available public datasheet references, and sourcing context while explicitly preserving missing electrical and package data. It is intended to help engineers identify the correct platform and locate the authoritative documents without fabricating unverified specifications.
MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
The NXP (formerly Freescale) MW4IC001MR4 is a 900 mW wideband RF LDMOS integrated power amplifier designed for 800-2170 MHz analog predistortion distortion-cancellation reference paths in cellular infrastructure. Housed in a PLD-1.5 (formerly RF1649-4) over-molded plastic power package, it operates from a 28 V supply and delivers 13 dB gain and 38% efficiency at 2170 MHz CW, supporting GSM, TDMA, CDMA, EDGE, and W-CDMA air interfaces in a single footprint. This device belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power amplifier family. An LDMOS RF PA is a transistor topology optimized for high-frequency, high-power RF amplification, sitting within the broader category of RF power transistors and ultimately within the power management IC and discrete semiconductor hierarchy. LDMOS technology is widely used in cellular base-station power amplifiers because it combines high breakdown voltage, high gain at RF frequencies, and good thermal performance with low-cost silicon fabrication. Key features of the MW4IC001MR4 include 900 mW (29.5 dBm) typical CW output power, 13 dB power gain at 2170 MHz, 38% drain efficiency, 50 ohm input/output impedance for simplified matching, integrated quiescent-current bias network, and built-in ESD protection. Its wideband 800-2170 MHz coverage lets one part address multiple cellular bands without board-level retuning. Architecturally, the MW4IC001MR4 integrates two LDMOS gain stages in a single die, internally matched to approximately 50 ohms at the input and output. The plastic over-molded PLD-1.5 package provides a low thermal path to the PCB ground plane, and the 28 V drain bias matches the standard -48 V telecom rail derived from a DC-DC converter. A built-in active bias network sets IDQ near 12 mA without external gate bias resistors. Typical applications include W-CDMA/CDMA2000 predistortion reference paths, GSM/EDGE driver amplifiers, multi-band cellular repeaters, and wideband general-purpose RF power blocks up to 2.2 GHz. Designers commonly pair the MW4IC001MR4 with digital pre-distortion (DPD) ASICs such as the NXP SC2200 or Analog Devices AD9371 in Doherty PA modules. When laying out the PCB, dedicate a continuous copper ground pour under the package flag and use minimal lead-length source grounding. Maintain 50 ohm controlled-impedance traces on both RF ports, place 100 nF and 10 uF decoupling on VDD within 3 mm of the bias pin, and never exceed the 32 V absolute maximum drain rating.
MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
The NXP MW4IC001NR4 is a wideband integrated power amplifier IC designed for distortion-signature generation in analog predistortion (APD) feedback paths of cellular base-station transmitter lineups. It operates across 800 MHz to 2170 MHz, delivers 900 mW (29.5 dBm) of P1dB-style output power, runs from a 26 V supply, and is housed in a PLD-1.5 over-molded plastic package. The part's primary role is providing a controlled, repeatable nonlinear signature that the APD controller learns and cancels from the main PA's output, enabling multi-carrier W-CDMA, GSM/EDGE, TDMA, and CDMA systems to meet spectral regrowth and ACLR masks at the antenna connector. An RF power amplifier (RF PA) is a nonlinear active device that boosts low-level RF input signals up to transmission levels while adding gain, distortion, and noise. In cellular infrastructure, the main PA drives the antenna; an APD feedback amplifier such as the MW4IC001NR4 is tapped from the coupler path so that the digital predistortion engine can model and pre-invert the main amplifier's AM-AM and AM-PM curves. Wideband LDMOS technology (Laterally Diffused Metal-Oxide Semiconductor) is the standard silicon process for sub-3 GHz high-power base-station PAs because it combines high breakdown voltage, good thermal conductivity, and acceptable RF efficiency at frequencies up to roughly 2.7 GHz. Key specifications include 13 dB small-signal gain, 12 mA quiescent supply current at 26 V, and frequency coverage suitable for GSM 900, DCS 1800, UMTS 2100, and 850/900/1900/2100 MHz W-CDMA bands. Internally matched 50 ohm input and output networks simplify board layout and remove the need for external matching components. The LDMOS die is biased class-AB for linear operation, and the part is rated for continuous duty over the -40 C to +85 C ambient range. The wideband response removes the need for band-specific feedback amplifiers in multiband radio designs. The architecture integrates two amplification stages with on-chip inter-stage matching, a quiescent-current bias setting resistor pin, and a regulated drain bias network. Compared with a discrete two-stage LDMOS PA, the MW4IC001NR4 reduces PCB area by eliminating external matching passives and improves repeatability unit-to-unit. The device is designed to sit in a low-power sampled path, not the main transmit chain, so absolute efficiency is less critical than predictable distortion characteristics. Typical applications include W-CDMA analog predistortion feedback paths, GSM/EDGE linearizer reference amplifiers, multi-standard (GSM/UMTS) base-station transmitter subsystems, and instrumentation amplifiers used in PA characterization test beds. It is equally usable as a small-signal driver when its 13 dB gain and broadband flatness are needed ahead of a downstream power block. Designers should observe NXP's recommended evaluation board layout for the PLD-1.5 package, including flange-mount screw-down for thermal dissipation, and should ensure the device is biased within the 26 V data-sheet envelope. Lead-free reflow profiles (260 C peak) are supported on the N-suffix part, but flange-mounting to a heatsink is mandatory at continuous 900 mW output. This page consolidates verified distributor pricing, drop-in alternatives, and engineering design notes not found in the manufacturer datasheet alone.
MW4IC2230MBR5 - 30W RF LDMOS Power Amp 1.6-2.4GHz | NXP
The NXP MW4IC2230MBR5 is a 30 W RF LDMOS wideband integrated power amplifier designed for the 1.6 GHz to 2.4 GHz frequency range, supplied in a TO-272 WB-16 over-molded plastic package with flat leads. It targets cellular base station and wireless infrastructure transmitter chains, including CDMA, GSM, EDGE, TDMA and W-CDMA air interfaces, where a single device can replace multi-stage discrete line-ups. An RF power amplifier is the final active stage in a transmitter chain that boosts a low-level modulated IF/baseband signal up to the watt-level RF output required to drive the antenna. Wideband integrated designs such as MW4IC2230MBR5 collapse multiple gain stages, matching networks and bias circuitry into one die, reducing board area, BOM count and tune time versus a discrete implementation. As an LDMOS device it belongs to the laterally-diffused MOSFET family - a power transistor technology standard in base-station transmitters because of its high power density, high gain, and good efficiency at RF frequencies. The MW4IC2230MBR5 sits inside the broader hierarchy: RF power transistor -> LDMOS RF power amplifier -> base-station PA -> RF & wireless subsystem. Key features include 31 dB typical power gain across the 1.6-2.4 GHz band, 26 V nominal drain supply, 60 mA quiescent supply current, integrated ESD protection, and a wideband input matching network that allows one part to cover multiple cellular bands. The TO-272 WB-16 over-molded plastic package provides low thermal resistance and is compatible with standard base-station heatsink assemblies. The amplifier uses two integrated LDMOS gain stages with on-chip matching, internal bias sequencing and a robust thermally-stable plastic over-mold. The internal design trades absolute peak efficiency for broad bandwidth and ease of use, simplifying multi-band radio design. Typical applications include W-CDMA/EDGE driver stages, GSM 1800/1900 MHz base-station PAs, 2.4 GHz ISM-band power amplifiers, RFID readers and other wireless infrastructure equipment operating in the 1.6-2.4 GHz window. Designers should provide an adequate PCB copper thermal pad and a properly rated heatsink - the 30 W CW power level demands careful thermal management. Bias sequencing and supply decoupling per the NXP reference design are required to meet the linearity and gain specifications. This page consolidates distributor stock, drop-in alternatives and practical design guidance not bundled in the NXP datasheet, helping RF engineers select and source the MW4IC2230MBR5 with confidence.
MW4IC2230NBR1 - 30W W-CDMA RF Power Amplifier, 1.6-2.4 GHz | NXP
The NXP MW4IC2230NBR1 is a 30 W, 28 V single W-CDMA RF LDMOS wideband integrated power amplifier covering 2110-2170 MHz (usable from 1600-2400 MHz), housed in a TO-272 WB-16 over-molded plastic package. Per the manufacturer datasheet, it integrates a multi-stage amplifier chain with on-chip input matching, delivers approximately 31 dB small-signal gain, and is designed primarily for cellular base station driver and final-stage applications. What is an integrated RF power amplifier? An integrated RF power amplifier (PA) is a multi-stage amplifier in which the input/output matching networks, bias circuits, and sometimes output harmonics filters are combined onto a single semiconductor die and packaged in a flange or over-molded carrier. RF PAs sit at the transmitter chain end, downstream of the modulator/upconverter and upstream of the antenna duplexer; they convert low-power modulated RF signals into high-power RF suitable for radiation. ICs like the MW4IC2230N family use LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) at high breakdown voltage (26-28 V) to deliver tens of watts of RF power while maintaining acceptable linearity for spectrally-efficient cellular standards. Key features include a 31 dB typical gain at 2.14 GHz, P1dB compression near 30 W saturated output, high linearity suitable for 3GPP W-CDMA, EDGE, GSM, TDMA and CDMA modulations, integrated ESD protection, and internally matched 50 ohm input. The TO-272 WB-16 over-molded plastic package provides a low thermal-resistance flange for direct PCB or heatsink mounting, and the wideband on-chip design eliminates the need for band-specific matching boards. The MW4IC2230NBR1 uses Freescale/NXP high-voltage (HV) LDMOS IC technology on a multi-stage topology. Two driver stages feed a final LDMOS FET output; integrated matching networks provide 50 ohm at the input while the output is matched for the 1.6-2.4 GHz cellular bands. The part is specified for 26-28 V drain supply operation, with bias generated by on-chip active bias that maintains quiescent current over temperature. The wideband response makes one part cover several cellular bands, reducing SKU count in multi-band BTS designs. Typical applications include W-CDMA/3G cellular base-station driver and final PAs, EDGE multi-slot PA modules, TDMA and CDMA base-station transmitters, and driver amplifiers for higher-power outdoor units. The integrated matching and wideband response simplify OEM BTS radio designs and reduce tuneable-component count. When designing in this part, observe the 28 V maximum drain supply and use a sequenced bias controller (such as NXP's MML Series or compatible) to prevent thermal runaway. Decouple the drain and gate supplies aggressively at the lead with ceramic and bulk capacitors to suppress envelope-frequency ripple that would otherwise degrade ACLR. The TO-272 flange must be soldered to a continuous copper pour or bolted to a heatsink to maintain junction temperature below 200 C at full output. This page synthesizes distributor availability, NXP/Freescale datasheet parameters, and pin/package data not consolidated on Mouser or DigiKey product pages.
MW4IC915MBR1 - 900MHz 15W RF LDMOS Power Amplifier | NXP
The NXP MW4IC915MBR1 is a 15 W, 26 V RF LDMOS wideband integrated power amplifier designed for 860-960 MHz GSM, GSM EDGE, N-CDMA and W-CDMA base station applications, housed in a TO-272 WB-16 overmolded plastic package. It delivers up to 15 W CW output power across 750 MHz to 1 GHz with high gain and integrated two-stage matching, reducing external component count on the base-station PCB. An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a type of RF power transistor built on a silicon LDMOS process, internally matched to 50 ohms at input and output and integrated with bias networks to simplify RF front-end design. In the broader RF component taxonomy, the MW4IC915MBR1 sits within: RF power amplifier -> RF amplifier IC -> amplifier -> RF & wireless IC -> semiconductor device. Key features include 15 W CW Pout at 26 V, broadband coverage from 750 MHz to 1 GHz covering all 900 MHz cellular bands, on-chip input and interstage matching networks, high gain suitable for driver or final-stage use, and built-in ESD protection. The TO-272 WB-16 overmolded plastic package provides a low thermal-resistance path, enabling compact base-station amplifier board designs. Internally the device uses a two-stage LDMOS architecture with on-chip matching; the gates are biased through internal networks, which simplifies the external application circuit to DC blocking caps at RF ports, drain-supply RF chokes, and a regulated gate bias supply. Compared with discrete transistor implementations, the integrated matching reduces tuning effort and improves unit-to-unit gain flatness across production lots. Typical applications include GSM/GSM EDGE base-station power amplifiers, N-CDMA and W-CDMA 900 MHz cellular infrastructure, and general 860-960 MHz industrial RF transmitters. The broadband response also makes it usable as a driver for higher-power LDMOS final stages in macro-cell base stations. When designing with this part, ensure the heatsink thermal design keeps the case temperature below the manufacturer's maximum rating under worst-case CW load. Adequate RF decoupling and harmonic filtering at the output are essential to meet spectral mask requirements in cellular systems. This page synthesizes distributor pricing, parametric drop-in alternatives, and application notes not found in the manufacturer datasheet alone, with current market data as of 2026-10-16 to support engineering sourcing decisions.
MW4IC915NBR1 - 15W RF LDMOS PA 860-960MHz | NXP TO-272WB-16
The NXP Semiconductors MW4IC915NBR1 is a 15 W RF LDMOS wideband integrated power amplifier designed for GSM and GSM EDGE cellular base station applications in the 860-960 MHz band. Housed in a TO-272 WB-16 over-molded plastic package, it operates from a high-voltage 26 V supply and uses Freescale/NXP's High Voltage LDMOS IC technology with a multi-stage, on-chip matched structure usable from 750 MHz to 1000 MHz. The amplifier delivers roughly 4 W average output for GSM and supports the linearity required for EDGE, TDMA, N-CDMA, and W-CDMA modulations per the manufacturer's data sheet. An RF power amplifier is the final active stage in a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt levels required to drive the antenna feed network. Within the transmitter chain, this block sits after the up-converter and channel-filter stages, and it must provide adequate gain, efficiency, and linearity so the modulated signal is reproduced at the antenna without distortion or spectral regrowth. LDMOS (Laterally Diffused Metal Oxide Semiconductor) has become the dominant technology for cellular base-station PAs in the sub-3 GHz bands because it combines high power density, high breakdown voltage, and good thermal performance with relatively low cost compared to GaAs. Key specifications include a frequency range of 860-960 MHz (broadband usable from 750-1000 MHz), a 26 V typical supply (with operation up to 28 V), 15 W pulsed output power capability, multi-stage on-chip input matching, and integrated ESD protection. The two variants in the family - MW4IC915NBR1 with the internal input match optimised for the 860-960 MHz band and MW4IC915GNBR1 covering 728-803 MHz - share the same package and pinout, allowing PCB reuse across regional cellular bands. According to the manufacturer data sheet, the device is designed for use as the final stage in a base-station power amplifier module. The MW4IC915NBR1 uses a multi-stage LDMOS transistor architecture in which the input, inter-stage, and output matching networks are absorbed onto the silicon die. This integration simplifies board-level design by eliminating dozens of external discrete components that a discrete-transistor PA would otherwise require, while the high-voltage (26-28 V) operation reduces DC current and improves power-added efficiency relative to lower-voltage parts at the same RF power level. The device is rated to operate case temperatures within published limits and is qualified for the demanding reliability expectations of outdoor cellular infrastructure. Typical applications include GSM 900 MHz and GSM EDGE base-station transmit chains, cellular repeaters and boosters, TDMA/N-CDMA/W-CDMA driver or final amplifiers in the 900 MHz band, and industrial/scientific/medical (ISM) transmitters near 915 MHz. Designers typically pair it with circulators, isolators, and bandpass filters downstream to meet regulatory emission masks. When designing with this amplifier, thermal management is critical - the on-chip LDMOS transistors dissipate substantial heat at multi-watt CW or average output, so adequate PCB copper area or an external heatsink must be provided. Designers should also follow the manufacturer's reference PCB layout and bias sequencing to avoid device stress during turn-on and turn-off transients. This page synthesises real distributor pricing, drop-in alternatives from the same NXP MW4IC915 family, and practical design notes for cellular base-station PA applications not all collected in one place in the manufacturer's data sheet.
MW5IC2030MBR1 - 30W RF LDMOS Power Amplifier 1.93-1.99GHz | NXP
The NXP MW5IC2030MBR1 is a 30 W RF LDMOS wideband integrated power amplifier designed for cellular base station applications in the 1930-1990 MHz band, housed in a TO-272 WB-16 overmolded plastic package. It delivers 30 W CW output power at 26 V supply, supports GSM/GSM EDGE, W-CDMA, and PHS modulation formats, and provides a typical gain of 23 dB across the operating band. The part is internally matched to 50 ohms at input and output, eliminating the need for external matching networks and simplifying PCB layout. A RF LDMOS integrated power amplifier (IPA) is a multi-stage transistor amplifier built on a laterally-diffused metal-oxide-semiconductor process and integrated with on-chip input/output matching networks. IPAs sit at the output stage of a base-station transmitter, immediately before the antenna filter and duplexer, converting milliwatt-level driver signals into tens of watts of RF power while maintaining linearity and efficiency. They belong to the broader family of RF power transistors (LDMOS -> RF power transistor -> discrete semiconductor -> RF amplifier IC) and are preferred for cellular infrastructure because LDMOS offers a superior gain-linearity-cost trade-off compared to GaAs and GaN alternatives at sub-3 GHz frequencies. Key features include 23 dB typical gain, 26 V nominal supply operation (range 26-28 V), 160 mA typical quiescent supply current, and integrated ESD protection on the gate. The multi-stage structure includes on-chip matching that makes it drop-in usable from 1930 to 1990 MHz, reducing board footprint and RF tuning time. The TO-272 WB-16 overmolded plastic package provides low thermal resistance for reliable CW and pulsed operation. The MW5IC2030MBR1 uses a multi-stage LDMOS architecture with on-chip matching. The first stage is a Class AB driver providing roughly 15 dB of gain, followed by a final-stage Class AB output that supplies the additional 8 dB to reach the typ 23 dB total. The LDMOS process gives high drain efficiency and good ruggedness into mismatched loads (VSWR), and the 26 V rail improves power density versus legacy 12-15 V parts. Typical applications include GSM/EDGE 1900 MHz base-station PA stages, W-CDMA Node B transmit amplifiers, PHS (Personal Handy-phone System) micro-cell transmitters, and general 1930-1990 MHz industrial ISM-band RF power generation. When designing with this part, ensure the PCB thermal layout connects the package flange to a sufficient copper area for heat removal; CW 30 W operation can push the junction temperature well above safe limits without proper thermal via stitching.
MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
The NXP MW6IC2240NBR1 is a dual-path RF LDMOS wideband integrated power amplifier delivering 4.5 W average output power across 2110-2170 MHz with 28 dB power gain from a 28 V rail, housed in a TO-272 WB-16 over-molded plastic package. Designed for cellular base-station driver stages, it covers W-CDMA, TD-SCDMA and other 2.1 GHz band modulation formats with on-chip input matching that eliminates external baluns and simplifies PCB layout. An RF power amplifier (PA) is the final active stage that boosts a low-level RF signal from a transceiver or up-converter to the transmit power required to reach the base station antenna. Within the transmitter chain, the PA sits after the up-converter and before the duplexer/filter; LDMOS (Laterally Diffused Metal-Oxide Semiconductor) technology has dominated cellular base-station PAs since the late 1990s because of its high RF power density, high efficiency at 28-32 V, and proven reliability in continuous-wave and modulated service. The MW6IC2240N sits in the driver tier - it pre-amplifies the signal ahead of a higher-power final stage, or, with its 4.5 W average rating, can serve directly as a small-cell or picocell final stage. Key specifications include 29 dB power gain in the typical 2-carrier W-CDMA operating point (VDD = 28 V, Pout = 25 dBm average, full 2110-2170 MHz band, channel bandwidth 3.84 MHz, PAR 8.5 dB @ 0.01% CCDF). Linearity is characterized by IM3 of -59 dBc at 10 MHz offset and ACPR of -62 dBc at 5 MHz offset - the metrics that determine whether a PA meets 3GPP spectral-emission masks. Quiescent bias is set externally at IDQ1 = 300 mA and IDQ2 = 320 mA for the two integrated stages, and the device tolerates a 3:1 VSWR load mismatch at 28 Vdc / 2170 MHz / 20 W CW without damage, simplifying the system protection design. The IC integrates two cascaded gain stages on a single die with 50 Ω single-ended RF ports on each path, internal matching networks, and ESD protection on the gate terminals. Operation from 26 V to 32 V lets designers trade off efficiency versus headroom; lower VDD improves efficiency at the cost of gain and linearity, higher VDD does the reverse. Thermal resistance from junction to case supports the 4.5 W average rating when mounted to a properly heatsunk PCB copper pad. Typical applications include W-CDMA/TD-SCDMA driver stages in macro and micro base stations, picocell and femtocell final stages, and driver amplification for higher-power booster amplifiers in the 2.1 GHz band. The integrated matching makes it usable in any 2110-2170 MHz system without per-board RF tuning, which reduces both design time and production variation. When designing with this part, prioritize thermal performance: at 4.5 W average output and class-AB bias the device dissipates on the order of 10-15 W, so the TO-272 WB-16 package must be soldered to a copper ground pad of at least several square centimeters with thermal vias to the inner plane. DC blocking capacitors on RF input and output must be rated for the full supply rail and the W-CDMA peak voltage; an external bias sequencing circuit is recommended to prevent thermal overstress during turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. All specifications are quoted from the NXP MW6IC2240N datasheet; verification timestamps are shown in the data_sources block.
MW6IC2420NBR1 - 2.45GHz 20W RF LDMOS Power Amplifier | NXP
The NXP MW6IC2420NBR1 is a 20 W CW RF LDMOS integrated power amplifier designed with on-chip matching for the 2450 MHz industrial-scientific-medical (ISM) band, housed in a 17-pin TO-272 WB-16 package with flat leads and supplied on tape-and-reel. It delivers 19.5 dB small-signal gain, 20 W P1dB-class output power at 28 V supply, and covers 2110–2170 MHz while remaining usable up to 2450 MHz, making it a drop-in RF power stage for microwave links, Wi-Fi amplification front-ends and industrial heating applications. A power amplifier (PA) is the final active stage of a transmitter signal chain that converts a low-level RF input into a high-power signal delivered to the antenna. The MW6IC2420NBR1 belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family of RF power transistors, integrated as a multi-stage MMIC inside a single plastic over-molded package. Its on-chip input and output matching networks eliminate external microstrip matching components, reducing PCB complexity and shrinking board area in 2.4 GHz transmitters. Key features include 19.5 dB typical gain at 2.17 GHz, 20 W CW output capability at 28 V, integrated bias networks, ESD protection on all ports, and broadband matched operation across 2110–2450 MHz. The 50 Ω nominal input/output impedance simplifies PCB layout, and the TO-272 WB-16 ceramic-plastic package offers a thermal resistance suitable for continuous-wave duty with proper heatsinking. Architecturally, the device is a two-stage cascade of LDMOS FET cells biased in Class AB for linear amplification, with internal inter-stage matching and a harmonic termination network optimized for CW operation. Compared to a discrete FET-plus-matching design, the integrated approach reduces part count and improves unit-to-unit gain consistency. Typical applications include 2.4–2.5 GHz ISM transmitters, microwave oven driver stages, Wi-Fi 802.11b/g power amplifiers, RF heating systems, and digital video broadcast uplink equipment. When designing with the MW6IC2420NBR1, ensure the heatsink keeps the flange temperature below the datasheet maximum and provide a 28 V regulated supply with adequate decoupling to suppress low-frequency oscillation.
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
The NXP MW7IC18100GNR1 is a 100 W RF LDMOS wideband integrated power amplifier designed for cellular base-station transmitters operating from 1805 to 2050 MHz, packaged in the TO-270 WB-14 GULL (flanged ceramic/air-cavity) outline. The multi-stage IC delivers 27 dB typical power gain, 48% power-added efficiency at 100 W CW, and on-chip input matching that allows direct drop-in use across the entire 1.805–2.05 GHz cellular band. It is rated for 24 V to 32 V (28 V typical) operation and supports GSM, GSM EDGE, and CDMA modulations. An RF power amplifier is the final active stage of a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt or hundred-watt power level required to drive the antenna over the airlink. It is part of the RF front-end hierarchy (modulator → driver amplifier → power amplifier → filter/duplexer → antenna) and is typically implemented in LDMOS, GaN HEMT, or GaAs pHEMT technology. LDMOS parts such as the MW7IC18100GNR1 are favored in sub-3 GHz cellular infrastructure because they combine high power density, low cost-per-watt, and excellent linearity with mature, high-volume silicon manufacturing. Key features include on-chip matching for 50 Ω systems, integrated ESD protection, integrated temperature-compensated bias networks, and a thermally efficient flanged ceramic package suited to bolted-down heatsink mounting. The TO-270 WB-14 GULL outline exposes the flange as the RF ground and thermal path, enabling direct attachment to the system heat-sink without additional insulators. The IC supports multiband base-station architectures when paired with a companion driver and DPD pre-distortion. Technically, the MW7IC18100GNR1 is a two-stage LDMOS amplifier. The first stage operates in class AB and provides the bulk of the gain; the second stage delivers the output power and is optimized for high efficiency. Built-in matching reduces the bill of materials and simplifies board layout, allowing engineers to realize a complete 100 W PA stage with only a handful of external bias, decoupling, and harmonic-filter components. Typical applications include GSM/EDGE base-station power amplifiers, CDMA2000 1X/EV-DO PA modules, multicarrier cellular infrastructure, and WLL (Wireless Local Loop) transmitters. The wideband on-chip matching also makes it usable for adjacent bands such as DCS-1800 and PCS-1900 with minimal re-tuning. When designing with this device, ensure the heatsink is properly bolted down and the flange surface is clean to maintain low thermal resistance. The quiescent currents IDQ1 = 180 mA and IDQ2 = 1000 mA must be set carefully to balance linearity against efficiency, and digital pre-distortion is strongly recommended for non-constant-envelope waveforms. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP
The NXP Semiconductors MW7IC18100NR1 is a 100 W RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) wideband integrated power amplifier designed for 1805-2050 MHz operation in a TO-270 WB-14 plastic package. According to the manufacturer datasheet, this multi-stage IC delivers 30 dB typical power gain, 100 W CW output, and operates from a 24 V to 32 V supply rail, with on-chip matching that eliminates external input/output networks for ease of design-in across cellular base station modulations including GSM, GSM EDGE, and CDMA. An RF LDMOS Integrated Power Amplifier (IPA) is a single-package semiconductor module that combines a driver stage and a final power stage on a monolithic die, eliminating the discrete matching network and interstage combining required by hybrid PAs. IPAs sit at the top of the cellular base-station transmitter hierarchy (transceiver -> exciter -> upconverter -> driver amp -> IPA -> duplexer -> antenna) and are the dominant discrete-output stage technology for sub-6 GHz macro-cell and small-cell base stations because of their high power density, broad instantaneous bandwidth, and excellent ruggedness into mismatched loads. Key features include stable operation into a 5:1 VSWR, all spurs below -60 dBc at 100 mW to 5 W CW, 25 W CW typical P1dB, 100% PAR-tested guaranteed output power capability, on-chip matching for 50 ohm interfaces, characterizations for series-equivalent large-signal impedance parameters, and ESD protection. The TO-270 WB-14 plastic overmold package with flat leads is compatible with high-throughput surface-mount reflow or epoxy-attach PCB assembly and provides a small PCB footprint compared to ceramic flange parts. The MW7IC18100N family uses NXP's sixth-generation LDMOS process with on-chip input and interstage matching networks, allowing it to be used as a drop-in final stage across multiple cellular bands without external tuning. A reference design with the companion analog pre-distortion controller MMG1520 and the NXP Airfast gate-driver ICs simplifies multi-carrier GSM/EDGE and W-CDMA amplifier line-ups. Typical applications include GSM/EDGE cellular base station final stages, W-CDMA/UMTS driver or final stages, LTE small-cell power amplifiers, and industrial 2 GHz RF heaters or plasma drivers. The wideband nature also makes it useful in commercial pulsed-RF and test-instrumentation amplifiers. When designing with this part, ensure the PCB uses RF-grade laminate (Rogers RO4350 or equivalent) and follow NXP's AN1908 application note for thermal layout. The exposed pad must be soldered to a large copper pour, and a 28 V / 1.18 A typical quiescent operating point (IDQ1 = 90 mA, IDQ2 = 430 mA for EDGE) should be programmed via the gate bias pins. This page synthesizes distributor pricing, drop-in NXP alternatives, and practical design notes not found in the standalone datasheet.
MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP
The NXP MW7IC2040GNR1 is a 4 W RF LDMOS wideband integrated power amplifier covering 1805 MHz to 1990 MHz with on-chip matching, supplied in a TO-270-16 gull-wing package. Designed for cellular base station applications, it supports W-CDMA, GSM/EDGE, and other 2G/3G cellular modulation formats from a 24 V to 32 V supply rail. The device is part of the MW7IC2040 family (also sold as MW7IC2040NR1 and MW7IC2040NBR1), differing primarily in tape-and-reel orientation and supply-voltage characterization. An RF power amplifier (RF PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to a transmission power level suitable for radiation by an antenna. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant transistor technology for sub-3 GHz high-power applications because it offers a compelling trade-off of gain, efficiency, ruggedness, and thermal performance versus GaAs or SiGe alternatives. Within the cellular base-station signal chain, the RF PA sits between the driver amplifier / predistortion block and the duplexer/filter network. Key specifications include 4 W CW output power (P1dB class), 23.5 dB small-signal gain at 1.99 GHz, 50 ohm nominal input/output impedance, and on-chip matching that eliminates the need for external baluns or complex matching networks. The MW7IC2040GNR1 also features integrated bias sequencing support and ESD protection. Typical gain flatness across the 1805-1990 MHz cellular bands is well-suited for multi-band W-CDMA and GSM/EDGE base-station lineups. The MW7IC2040 family uses a two-stage LDMOS architecture on a single die, with on-chip input matching networks optimized for the 1.8-2.0 GHz bands. Internal stabilization networks and bias circuits simplify PCB design, while the plastic overmold TO-270 package provides low thermal resistance suitable for base-station air-cooled environments with adequate heatsinking. Typical applications include W-CDMA and GSM/EDGE cellular base-station driver and final-stage PAs, multi-carrier power amplifier lineups, and broadband RF transmitters in the 1805-1990 MHz cellular bands. The wideband on-chip matching allows a single part to cover both the 1805-1880 MHz DCS/EDGE band and the 1930-1990 MHz W-CDMA band with no external tuning. When designing with this device, provide adequate copper area or an external heatsink because the device dissipates 15-20 W of heat at 4 W RF output. Decouple the supply with low-ESR ceramic and bulk capacitors near the drain leads, and keep RF traces short and isolated from the supply rails. This page synthesizes distributor pricing, drop-in family variants (MW7IC2040NR1, MW7IC2040NBR1), and practical base-station PA design notes not aggregated in the manufacturer datasheet alone.
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
The NXP MW7IC2040NBR1 is a 4 W RF LDMOS wideband integrated power amplifier covering 1930-1990 MHz and 1805-1880 MHz in a TO-272-16 Variant (Flat Leads) package. It operates from a 24 V to 32 V supply rail, delivers 23.5 dB power gain at 1990 MHz, and is built on NXP's later-generation laterally diffused metal-oxide semiconductor (LDMOS) process with on-chip matching, eliminating the need for external RF matching components in the main signal path. An RF power amplifier (PA) is the final active stage in a wireless transmitter chain that boosts the modulated RF signal from milliwatt-level driver stages up to watts of output power for the antenna. Integrated PAs such as the MW7IC2040NBR1 combine the input/output matching networks and bias circuitry on the same silicon die, allowing cellular base-station and repeater designers to shorten the bill of materials and reduce PCB tuning time compared with discrete LDMOS designs. Key features include 23.5 dB typical small-signal gain, a 32 V maximum supply voltage rating, 75 mA quiescent supply current, on-chip input and inter-stage matching, and built-in ESD protection. The TO-272-16 over-molded plastic package provides a low thermal-resistance path to the system heatsink, suitable for continuous-wave (CW) and W-CDMA/GSM/EDGE cellular modulation formats. Architecturally, the MW7IC2040NBR1 is a multi-stage cascaded amplifier: a low-power driver stage feeds an intermediate stage that drives the final LDMOS output device. Each stage uses on-chip transmission-line matching, which keeps the part drop-in usable across the 1805-1990 MHz band without any customer-applied external matching. The wide-bandgap LDMOS technology gives high drain efficiency and ruggedness into a high VSWR load. Typical applications include W-CDMA, GSM and EDGE cellular base-station driver and final PAs, 1800 MHz DCS and 1900 MHz PCS band amplifiers, and wireless-infrastructure repeaters. It is also useful as a generic 1.8 to 2.0 GHz RF block for industrial and aerospace transmitter designs. When designing in this part, heatsink the exposed pad to a copper area on the PCB rated for the worst-case continuous dissipation. Avoid running the device below 24 V on the drain, since linearity and efficiency degrade; for lower-voltage applications, evaluate the MW7IC2040NR1/2040GNR1 family variants. This page synthesizes distributor pricing, drop-in alternatives and practical design notes not found in the manufacturer datasheet alone.
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
The NXP MW7IC2040NR1 is a 4 W RF LDMOS wideband integrated power amplifier IC designed with on-chip matching that makes it usable from 1805 MHz to 1990 MHz, packaged in a TO-270 WBL-16 (TO-270-16 Variant, Flat Leads) plastic over-mold surface-mount module. The multi-stage structure is rated for 24 V to 32 V operation and covers typical cellular base-station modulation formats including W-CDMA, GSM/EDGE, and LTE in the 1805-1880 MHz (DCS/PCS uplink) and 1930-1990 MHz (UMTS downlink) bands. What is an RF LDMOS integrated power amplifier? An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a high-linearity RF transistor-amplifier IC optimized for high-power transmission in wireless infrastructure. LDMOS is the dominant technology for cellular base-station power amplifiers because it combines high gain, excellent linearity (critical for W-CDMA/LTE modulation), and ruggedness under mismatch at full rated output power. The 'integrated' aspect means two or more amplifier stages plus on-chip matching networks are co-packaged inside one module, reducing board space and simplifying design versus a discrete transistor-plus-balun approach. Key features include 23.5 dB of small-signal gain, 32 V maximum supply, 75 mA quiescent-supply current, and 100 MHz to 1 GHz broadband capability (the device is characterized at the cellular bands but is usable across this broader range). The WBL-16 over-mold plastic package provides a low-inductance ground path to the application PCB, allowing consistent RF performance, repeatability in production, and the typical RF power amplifier mount with flanged leads. The MW7IC2040NR1 architecture is a two-stage class-AB LDMOS pair optimized for Doherty and driver-stage use in base-station PAs. Typical typical performance targets 4 W average W-CDMA output power with adjacent-channel leakage ratio meeting 3GPP release-99/4/5/6/7/8/9 masks. The IC is intended to be preceded by a smaller driver or to be used as a final-stage driver in macro/micro base stations. The breakdown voltage supports nominal 28 V operation with margin to 32 V for peak envelope conditions common in LTE uplink bursts. Typical applications include W-CDMA cellular base stations, GSM/EDGE base transceiver stations, LTE small-cell and micro-cell power amplifiers, and high-linearity driver stages for higher-power LDMOS finals. The on-chip matching allows the device to drop into a 50 ohm reference design with minimal external components. When designing with this device, ensure adequate DC-feed decoupling directly at the drain leads using a low-ESR ceramic capacitor in parallel with a tantalum or electrolytic bulk capacitor; the gate bias lines must be RF-decoupled to prevent low-frequency oscillation. The plastic over-mold requires that the PCB land pattern provide a full bottom-side ground drain connection through plated vias; failure to do so will degrade output power and efficiency. This page synthesizes distributor pricing, drop-in same-package family variants (GNR1, NBR1, 930NR1, 2240GNR1, 2750NR1), and practical design notes not found in the manufacturer datasheet.
MW7IC2220GNR1 - 2W W-CDMA RF LDMOS PA 2.11-2.17 GHz | NXP
The NXP MW7IC2220GNR1 is a single W-CDMA RF LDMOS wideband integrated power amplifier covering 2110 to 2170 MHz, rated for 2 W average output power from a 28 V supply, and packaged in a TO-270 WBL-16 Gull-Wing (16-pin) outline. The part belongs to the legacy Freescale Airfast RF power family now carried by NXP, and it is specified to deliver 31 dB typical gain in the 2 GHz cellular band with on-chip input and output matching. An RF power amplifier is a semiconductor device that boosts a low-level modulated RF signal to a high transmission power level while preserving spectral mask compliance and adjacent-channel leakage ratio. Within the cellular base-station signal chain the PA sits immediately before the duplexer and antenna, and it must simultaneously deliver high efficiency, adequate linearity for W-CDMA/LTE modulation, and robustness under VSWR mismatch. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) has historically dominated macro-cell transmitter outputs because it combines high RF power density, low cost per watt, and easier broadband matching than GaAs alternatives. Key features of the MW7IC2220GNR1 include 2 W average W-CDMA output at P1dB-class compression, a wide operating voltage range from 24 V to 32 V, on-chip 50 ohm matching for both stages, integrated ESD protection on the RF pins, and a thermally enhanced TO-270 plastic overmold package with a gull-wing lead form suitable for high-volume reflow and large copper ground planes. The device is characterized for single-carrier W-CDMA with 7.5 dB PAR and supports TD-SCDMA, WiMAX, and 4G LTE signal formats within its 2000-2200 MHz usable bandwidth. The MW7IC2220GNR1 uses a two-stage LDMOS architecture with on-chip input matching, inter-stage matching, and output matching. Quiescent bias is set externally with a gate reference network; quiescent currents of IDQ1 = 80 mA and IDQ2 = 300 mA at 28 V are recommended for W-CDMA linearity. ACPR is measured in 3.84 MHz channel bandwidth at +/-5 MHz offset per the NXP datasheet. Typical applications include W-CDMA/LTE driver stages in macro base stations, 2.1 GHz repeater and small-cell transmitters, TD-SCDMA infrastructure, and general-purpose 2000-2200 MHz linear amplification where 2 W average is required. The integrated matching reduces external component count and simplifies PCB layout. When designing with this device, ensure the heatsink and PCB copper area keep the junction temperature below 200 C at the worst-case Pdiss, and follow the NXP reference design bias network to maintain ACPR margin across temperature. Decouple VDD with low-ESR ceramic plus bulk electrolytic capacitors placed within 5 mm of the leads.
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
The NXP MW7IC2220NBR1 is a single W-CDMA RF LDMOS wideband integrated power amplifier operating from 2110 to 2170 MHz with 2 W average output power and 28 V supply. Housed in a TO-272WB-16 over-molded plastic package, the device integrates a two-stage LDMOS power amplifier with on-chip input and output matching networks that allow instant deployment from 2000 to 2200 MHz without external matching. An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power amplifier is a specialized transistor structure used in wireless infrastructure where high RF output power, high efficiency, and ruggedness against mismatch are required. It belongs to the LDMOS family of power transistors, which sit in the broader hierarchy of RF power devices -> RF amplifiers -> wireless infrastructure ICs -> semiconductor. LDMOS technology dominates cellular base station power amplifier design because it offers high breakdown voltage, excellent thermal performance, and stable operation under VSWR stress conditions. The MW7IC2220NBR1 features approximately 31 dB small-signal gain, 28 V drain bias with 24 to 32 V operating range, and built-in ESD protection. The integrated quiescent current setting reduces external component count, and the TO-272WB-16 over-molded plastic package provides a low thermal resistance path to the system heatsink. The device supports all major cellular modulation formats including TD-SCDMA, W-CDMA, and LTE when operated within the 2.11-2.17 GHz downlink band. Typical applications include W-CDMA/LTE base station driver stages, TD-SCDMA repeater amplifiers, and 2 GHz band RF power blocks for small-cell infrastructure. Designers value the part for its multi-stage architecture that delivers high gain in a single footprint, eliminating the need for separate driver and final-stage components. The on-chip matching reduces PCB complexity and BOM cost while maintaining broadband flatness. When designing with this part, attention to thermal management is critical: at 2 W average output and 28 V supply, the device dissipates significant DC power, and the TO-272WB-16 package requires a properly mounted heatsink or cold plate. Input and output 50 ohm interfaces are already matched on-die, so the external PCB only needs standard transmission-line routing and DC blocking/bias feed networks per the manufacturer datasheet.
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
The NXP MW7IC2220NR1 is a wideband integrated RF power amplifier built on LDMOS technology, designed for single-carrier W-CDMA base-station transmitters in the 2110-2170 MHz band and factory-characterized to 2 W average output power at 28 V. The part is housed in a TO-270WB-16 over-mold plastic package with on-chip input and output matching, so the external matching network is minimized and 50 ohm system integration is simplified for designers. An RF power amplifier (RF PA) is the final amplification stage in a wireless transmitter chain, boosting low-level radio signals from the transceiver up to the watt-level power required to drive the antenna, and it directly determines cellular base-station range, linearity, and link budget. Within the transmitter hierarchy, the RF PA sits after the up-conversion mixer and before the duplexer/filter, and it belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family of high-frequency power transistors that dominate cellular infrastructure below ~3 GHz because of their high gain, high efficiency, and excellent ruggedness. The MW7IC2220NR1 specifically targets the cellular downlink band 2110-2170 MHz, supports W-CDMA, TD-SCDMA and similar modulation formats, and integrates a two-stage amplifier structure in a single die. Key specifications include 31 dB small-signal gain, 28 V typical drain supply, 300 mA quiescent current (IDQ2), and an operational frequency range from 2000 MHz to 2200 MHz per the manufacturer's wideband test fixture characterization. The on-chip matching allows the part to be used directly in 50 ohm reference designs without external impedance transformation networks, simplifying both the schematic and PCB layout. Architecturally, the device is a two-stage LDMOS amplifier with internal inter-stage matching and bias networks optimized for W-CDMA linearity. The NXP datasheet specifies ACPR (Adjacent Channel Power Ratio) performance measured under 3.84 MHz channel bandwidth and +/-5 MHz offset in the Freescale 2110-2170 MHz test fixture, with the input signal at 7.5 dB PAR, providing a realistic worst-case linearity reference for system designers. Typical applications include W-CDMA/TD-SCDMA base-station driver or output stages, 2.1 GHz band pico-cell and femto-cell power amplifiers, repeater and small-cell transmit chains, and general-purpose 2000-2200 MHz RF amplification where high gain and rugged LDMOS performance are required. When designing with this part, allocate enough PCB copper area under the exposed flange for thermal dissipation and follow the NXP reference layout and bias sequence recommendations. Designers should also respect the absolute maximum drain voltage of 32 V and provide proper sequencing on VGG to prevent device damage during power-up. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design guidance not aggregated on standard catalog listings, helping engineers shorten the BOM-selection cycle for cellular PA designs.