BSC019N08NS5ATMA1 vs BSZ0501NSIATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC019N08NS5ATMA1 tarafından Infineon ve BSZ0501NSIATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC019N08NS5ATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TA=25C | 28 A | — |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +150 C | [DATA_NEEDED: Tj max] |
| Paket | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 | [DATA_NEEDED: MSL rating] |
| RoHS Durumu | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Part Number | — | BSZ0501NSIATMA1 |
| Product Family | — | OptiMOS 5 (25V/30V) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |