BSC050N04LSGATMA1 vs BSZ100N03MSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC050N04LSGATMA1 tarafından Infineon ve BSZ100N03MSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSC050N04LSGATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | Trench MOSFET (OptiMOS) |
| Paket | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TSDSON-8 (5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55C to +150C | -55C to +150C (junction) |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| RoHS Durumu | Compliant | — |
| MSL Seviyesi | 1 | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 25V / 30V |
| Transistor Türü | — | N-Channel MOSFET |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA | — | 10 A |
| Continuous Drain Current (ID) at TC | — | 40 A |
| Power Dissipation (PD) at TA | — | 2.1 W |
| Power Dissipation (PD) at TC | — | 30 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] |
| Terminal Finish | — | Tin (Pb-free) |
| Qualification | — | JEDEC - target application qualified |
| Avalanche Tested | — | 100% (per JEDEC) |
| RoHS Compliance | — | Compliant (Pb-free plating) |
| Klorürsüz | — | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | — | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | — | [DATA_NEEDED: see datasheet] |