BSC0901NSATMA1 vs BSC019N04NSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC0901NSATMA1 tarafından Infineon ve BSC019N04NSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC0901NSATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS (trench) |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Continuous Drain Current (ID) at Ta | 28 A | — |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C | -55C to +150C |
| Paket | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8-1 (TDSON-8 FL) |
| Montaj Türü | Surface Mount | Surface Mount |
| Nem Hassasiyet Seviyesi (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| RoHS Durumu | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | — |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |