IAUCN04S7N027GATMA1 vs IAUCN04S7L042GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN04S7N027GATMA1 tarafından Infineon ve IAUCN04S7L042GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUCN04S7N027GATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 40V |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| Paket / Kas | PG-THSOG-4-1 (SSO4G 5x6) | — |
| Montaj Türü | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Qualification | Automotive | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temperature range] | -55C to +175C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | [DATA_NEEDED: MSL] | 1 |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Technology | — | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Paket | — | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |