IAUCN10S7N021ATMA1 vs BSZ096N10LS5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUCN10S7N021ATMA1 tarafından Infineon ve BSZ096N10LS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ AktifInfineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUCN10S7N021ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | — |
| Paket | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS Durumu | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| On-Resistance RDS(on) max | — | 9.6 mΩ at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +150 °C (junction) |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| Packaging Code | — | ATMA1 (tape and reel) |