IRFH5020TRPBF vs BSC0901NSATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFH5020TRPBF tarafından Infineon ve BSC0901NSATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFH5020TRPBF | BSC0901NSATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | — |
| Configuration | Single with built-in diode | Single N-Channel with Built-in Diode |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 55 mΩ | — |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| Güç Tüketimi (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +150 °C (TJ max) | -55C to +150C |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| MSL Seviyesi | 1 (per industry standard for PQFN-8) | — |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Paket | — | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Nem Hassasiyet Seviyesi (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| RoHS Durumu | — | Compliant |