IRLL024ZTRPBF vs IRF3205STRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLL024ZTRPBF tarafından Infineon ve IRF3205STRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLL024ZTRPBF | IRF3205STRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | HEXFET Power MOSFET (trench-gate) | HEXFET (advanced process) |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| Paket | SOT-223 (TO-261-4) | TO-263-3 (D2PAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | 1 (unlimited floor life) | — |
| RoHS Durumu | Compliant | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Packaging | — | Tape & Reel (STRL) |