MPX5050DP vs MPX5010DP Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPX5050DP tarafından NXP Semiconductors ve MPX5010DP tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MPX5050DP | MPX5010DP |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | — |
| Duyarlılık Türü | Differential Pressure Sensor | — |
| Operating Principle | Piezoresistive (MEMS silicon) | — |
| Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | — |
| Pressure Port Type | Differential, dual tube port (Male, 0.19" / 4.93 mm Tube) | — |
| Çıkış Türü | Analog ratiometric voltage | Analog, ratiometric |
| Çıkış Gerilimi Aralığı | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Full-Scale Span | 4.5 V typical | — |
| Besleme Gerilimi | 5.0 V nominal (4.75 V to 5.25 V) | 4.75 V to 5.25 V (5 V typical) |
| Sensitivity | 90 mV/kPa typical | 450 mV/kPa (typical) |
| Accuracy | [DATA_NEEDED: full temperature accuracy band] | — |
| Response Time | 1 ms typical | — |
| Overpressure Rating | 200 kPa | — |
| İşletim Sıcaklığı | -40C to +125C | 0 C to +85 C (compensated) |
| Paket | 6-SIP Module (SOT1693-1 / Case 1351-01) | 6-SIP Module |
| Montaj Türü | Through-Hole (with dual pressure ports) | Through-hole (SIP) |
| Besleme Akımı | [DATA_NEEDED: quiescent supply current] | [DATA_NEEDED: supply current mA] |
| RoHS Durumu | Compliant | Compliant |
| Pressure Type | — | Differential |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |