UCC21550Q-Q1 vs UCC21530Q-Q1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma UCC21550Q-Q1 tarafından Texas Instruments ve UCC21530Q-Q1 tarafından Texas InstrumentsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | UCC21550Q-Q1 | UCC21530Q-Q1 |
|---|---|---|
| Marka | Texas Instruments | Texas Instruments |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Number of Channels | 2 | 2 |
| Isolation Rating | 5000 Vrms (reinforced) | 5.7 kVRMS (reinforced) |
| Isolation Technology | Capacitive coupling | — |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Programmable Dead Time | Yes (single resistor) | — |
| Target Transistors | Power MOSFET, SiC, GaN, IGBT | — |
| İşletim Sıcaklığı | -40C to +150C | [DATA_NEEDED: temperature range] |
| Paket | 16-SOIC (DW) | SOIC-14 (DWK) |
| Montaj Türü | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| Disable Function | Yes | — |
| RoHS Durumu | Compliant | Compliant |
| Besleme Gerilimi | [DATA_NEEDED: VDD range] | — |
| Output Peak Current (Source) | — | 4 A |
| Output Peak Current (Sink) | — | 6 A |
| Channel-to-Channel Spacing | — | 3.3 mm |
| CMTI (Common-Mode Transient Immunity) | — | 125 V/ns (minimum) |
| Maximum Switching Frequency | — | 5 MHz |
| Configuration | — | Low-side, high-side, half-bridge, dual low-side |
| Dead Time | — | Programmable via DT pin resistor |
| Etkin Pin | — | Yes |
| Input Threshold | — | TTL and CMOS compatible |
| Driven Device Types | — | IGBT, Si MOSFET, SiC MOSFET |
| Qualification | — | AEC-Q100 (automotive) |
| Supply Voltage VDDI | — | [DATA_NEEDED: VDDI range] |