IAUC60N04S6N044ATMA1 vs BSC123N08NS3GATMA1 موازنہ
تفصیلی ساتھ ساتھ موازنہ از IAUC60N04S6N044ATMA1 بذریعہ Infineon اور BSC123N08NS3GATMA1 بذریعہ Infineon. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | IAUC60N04S6N044ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| برانڈ | Infineon | Infineon |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Technology | OptiMOS-6 N-channel trench MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C | -55C to +150C |
| پیکیج | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount | Surface Mount |
| MSL لیول | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| RoHS اسٹیٹس | Compliant | Compliant with exemption |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Configuration | — | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Automotive Qualified | — | Yes (AEC-Q101) |