FDD8896-F085 - 30V 94A N-Channel PowerTrench MOSFET | onsemi
MPN: FDD8896-F085 ✗ اختتامِ زندگیFDD8896-F085 جائزہ
What is a PowerTrench MOSFET? A PowerTrench MOSFET is an N-channel power MOSFET built on a proprietary trench-gate process that creates a vertical channel under each cell, dramatically lowering on-state resistance per unit silicon area versus older planar DMOS structures. It belongs to the broader MOSFET hierarchy (MOSFET -> power MOSFET -> discrete semiconductor), and in modern SMPS topologies it acts as the synchronous-rectifier or main switch on the low-voltage side. The combination of low Rds(on), low Qg, and high current density makes it ideal for compact point-of-load and POL regulators.
Key features of the FDD8896-F085 include 30 V Vdss, 5.7 mOhm Rds(on) at Vgs = 10 V, 94 A continuous drain current at 25 C case temperature, 80 W maximum power dissipation at Tc = 25 C, and an avalanche-rated body diode. The device is also characterized for low gate charge and fast switching, which enables high-frequency operation and reduced driver losses. It is qualified to AEC-Q101 for automotive reliability, and is available in a Halogen-free, lead-free DPAK surface-mount package.
Typical applications include synchronous rectification in DC/DC converters, low-side switching in buck regulators, motor control and battery protection, hot-swap and OR-ing switches, and primary-side switching in isolated POL modules. The 30 V drain-source rating gives comfortable headroom for 12 V bus rails and 19 V adapter-fed systems, while the 5.7 mOhm on-resistance keeps conduction loss low at high currents.
When designing with this part, calculate conduction loss as P = I_d^2 x Rds(on) and ensure that the resulting junction temperature stays below 150 C under worst-case ambient and cooling conditions. A small gate-drive resistor (typically 4.7 to 10 ohm) is recommended to control ringing and limit dV/dt-induced turn-on. For thermal reliability, mount the DPAK tab onto at least 1 sq inch of copper.
This page synthesizes distributor pricing, AEC-Q101 automotive qualification details, drop-in TO-252 alternatives, and practical PCB-layout guidance that is not consolidated in the manufacturer datasheet alone. Engineers searching for a 30 V synchronous-rectifier MOSFET in DPAK will find the parametrics, cross-reference list, and SOA guidance needed for design-in and second-source decisions.
کے لیے ڈراپ اِن متبادل FDD8896-F085 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں FDD8896-F085 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Manufacturer, Package, Pin Count, Technology.
NTMFS5C430NL
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NVMFS5C430NL
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
FDD8896
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →FDU8896
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFR3711ZTRPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
AON7403
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
FDD8896-F085 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | onsemi (Fairchild Semiconductor) |
| FET Type | N-Channel MOSFET |
| Technology | PowerTrench (Trench-Gate) |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) at Tc=25C | 94 A |
| Continuous Drain Current (Id) at Ta=25C | 17 A |
| Rds(on) Max at Vgs=10V | 5.7 mOhm |
| Maximum Power Dissipation (Pd) at Tc=25C | 80 W |
| Gate-Source Voltage (Vgs) Max | 20 V |
| Gate Threshold Voltage (Vgs(th)) Typ | 2.0 V |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (Tj) |
| پیکیج | TO-252 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 |
| RoHS / Halogen-Free Status | Compliant / Halogen-Free |
| Lead-Free | Yes |
| MSL لیول | 1 |
FDD8896-F085 پن کنفیگریشن
| پن 1 | Gate — MOSFET gate drive input |
| پن 2 | Source — MOSFET source connection (internally tied to pin 3 and tab) |
| پن 3 | Source — MOSFET source connection (internally tied to pin 2 and tab) |
| پن TAB | Drain (Tab) — MOSFET drain connection through metal tab; thermal pad for heatsinking |
محفوظ آپریٹنگ ایریا - FDD8896-F085
عام استعمالات
FDD8896-F085 کے لیے موزوں ہے 6 ایپلیکیشنs: Synchronous Rectifier in DC/DC Converters, Automotive 12V Load Switch and Battery Protection, Motor Drive and H-Bridge Switching, Hot-Swap and OR-ing Switch, Point-of-Load (POL) Regulator Primary Switch, Solar Charge Controller and Renewable Power Switching.
Synchronous Rectifier in DC/DC Converters
The FDD8896-F085 is purpose-built by onsemi as the low-side synchronous rectifier in 12 V-input buck converters. Its 5.7 mOhm Rds(on) at Vgs=10 V and 30 V Vdss rating cover 12 V rails with ample margin for ringing, while the 94 A continuous rating handles >1000 W converter stages. Low gate charge and fast switching enable 300 kHz to 1 MHz operation, shrinking magnetics. Versus a Schottky rectifier the FDD8896 cuts rectification loss by 60-80 percent, improving overall efficiency by 2-4 percent in heavy load.
تجویز کردہ
Automotive 12V Load Switch and Battery Protection
AEC-Q101 qualification makes the FDD8896-F085 a strong fit for 12 V automotive load switches and reverse-battery protection FETs. Its 30 V Vdss tolerates load-dump transients up to 35 V clamped, while 5.7 mOhm Rds(on) keeps voltage drop below 50 mV at 10 A, preserving headroom for downstream ECUs. The DPAK package survives under-hood thermal stress, and the 94 A rating supports engine-starter interconnects and high-current body modules without paralleling devices.
تجویز کردہ
Motor Drive and H-Bridge Switching
For brushed-DC motor drive and H-bridge low-side positions, the FDD8896-F085 delivers 94 A pulsed current at 25 C case to drive windshield-wiper motors, seat adjusters, and cooling fans. Its low Rds(on) keeps I^2R heating modest, while 80 W power dissipation handles start-up surges up to 300 A for tens of milliseconds. The -55 C to +150 C Tj range survives under-hood cold-cranking (-40 C) and high-ambient thermal stress without derating outside the SOA envelope.
تجویز کردہ
Hot-Swap and OR-ing Switch
In redundant 12 V or 24 V power systems, the FDD8896-F085 serves as the OR-ing FET or hot-swap element. Its avalanche-rated body diode absorbs transient back-feed when parallel supplies parallel, while the 5.7 mOhm on-resistance limits steady-state loss to less than 0.5 W at 5 A. The 30 V Vdss handles brief 24 V bus transients during load dump, and the DPAK footprint allows direct PCB swap with Infineon and Vishay second sources.
تجویز کردہ
Point-of-Load (POL) Regulator Primary Switch
For 19 V adapter-fed POL modules stepping down to 5 V, 3.3 V, and 1.0 V core rails, the FDD8896-F085 functions as the main primary-side MOSFET. Its 30 V Vdss supports 19 V nominal plus 10 percent tolerance and ringing margin, and the 5.7 mOhm Rds(on) at Vgs=10 V minimizes conduction loss in continuous conduction mode. The device's fast switching edges enable 500 kHz operation, shrinking output filter inductors below 10 mm^2 in laptop and SSD applications.
تجویز کردہ
Solar Charge Controller and Renewable Power Switching
In low-voltage solar charge controllers and battery management systems, the FDD8896-F085 acts as the low-side disconnect FET or PWM switching element. Its 30 V Vdss handles up to 24 V panel open-circuit voltages with derating margin, and the 5.7 mOhm on-resistance keeps conduction loss under 1 W at 10 A continuous charge current. The AEC-Q101 qualification extends reliability to off-grid solar installations in harsh environments with wide temperature swings.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا FDD8896-F085 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | NTMFS5C430NL | NVMFS5C430NL | FDD8896 | FDU8896 | IRFR3711ZTRPBF | AON7403 |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | Infineon | Alpha & Omega Semiconductor |
| Package | TO-252 (DPAK) | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-251 (IPAK) - equivalent through-hole | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Drain-Source Voltage (Vdss) | 30 V | 40 V | 40 V | 30 V | 30 V | 20 V | 30 V |
| Continuous Drain Current (Id) at Tc=25C | 94 A | 200 A | 200 A | 94 A | 94 A | 93 A | 50 A |
| Rds(on) Max at Vgs=10V | 5.7 mOhm | 2.6 mOhm | 2.6 mOhm | 5.7 mOhm | 5.7 mOhm | 5.7 mOhm | 5.5 mOhm |
| Maximum Power Dissipation (Pd) | 80 W | 200 W | 200 W | 80 W | 80 W | 79 W | 50 W |
| Automotive Qualification (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Not qualified | Yes |
| Lifecycle Status | Obsolete | Active | Active | Obsolete | Obsolete | Active | Active |
| Technology | PowerTrench (Trench-Gate) | Trench-Gate | Trench-Gate | PowerTrench | PowerTrench | HEXFET (Trench) | AlphaMOS (Trench) |
اہم امتیازی خصوصیات
- Pin-compatible higher-voltage upgrade path (بمقابلہNTMFS5C430NL)
- AEC-Q101 automotive qualification (بمقابلہIRFR3711ZTRPBF)
- Lower on-resistance than older-generation planar parts (بمقابلہAON7403)
ڈیزائن نوٹس
Estimated: at Id = 50 A continuous and Rds(on) = 5.7 mOhm, conduction loss is P = I^2 x R = 50^2 x 0.0057 = 14.25 W. With the DPAK thermal resistance of approximately 1.5 C/W junction-to-case on 1 sq inch of FR4 copper, junction-to-ambient theta_JA is around 50 C/W, yielding a Tj rise of 14.25 x 50 = 712 C above ambient, which exceeds the 150 C Tj(max) limit. Derate to 25 A continuous or add a forced-air heatsink or 4+ square inches of copper pour.
Mount the DPAK tab onto at least 1 square inch (645 mm^2) of copper pour on the top layer to achieve the rated 80 W power dissipation. Use thermal vias (8-12 vias of 0.3 mm drill) connecting the tab pad to inner copper planes to spread heat. Keep gate and source traces short and wide (>= 0.5 mm) to minimize gate-loop inductance and prevent dv/dt-induced turn-on.
Do not exceed 20 V on the gate (Vgs max); use a 12 V gate-drive Zener clamp and 4.7 to 10 ohm gate resistor to control ringing. In synchronous-rectifier position, add 100 ns of dead-time to prevent shoot-through. The avalanche-rated body diode handles 30 V transients, but sustained operation above 30 V Vdss will destroy the device - place a TVS clamp on the drain for inductive loads.
تعمیل کی معلومات
AEC-Q101 (not Q100) automotive qualification per onsemi datasheet. Halogen-free and lead-free per onsemi product page. RoHS and REACH compliance confirmed by onsemi material declaration.
