IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon
MPN: IPL60R125C7AUMA1 ✓ فعالIPL60R125C7AUMA1 جائزہ
A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P/N epitaxial columns in the drift region to overcome the silicon limit of conventional MOSFETs, dramatically reducing RDS(on) per unit area and improving switching loss trade-offs. The CoolMOS C7 family in particular targets hard-switching PFC, TTF (two-transistor forward), and LLC resonant stages in switched-mode power supplies, server PSUs, telecom rectifiers, and industrial welding/induction heating. The superjunction approach (pioneered and named by Infineon) yields substantially lower Eoss turn-off losses than prior generation CoolMOS CP devices while keeping the same 600 V-950 V voltage class.
Key specifications include a 600 V VDS maximum, 17 A ID continuous (Tc), 125 mOhm RDS(on) maximum, and 103 W power dissipation. The C7 generation also features an ultra-low figure-of-merit (RDS(on) x Qg) which reduces gate-drive losses and enables higher switching frequencies (typically 65 kHz to 300 kHz in PFC stages). The PG-VSON-4 package measures approximately 8x8 mm with a large exposed drain pad that doubles as the thermal pad, enabling very low thermal resistance and minimal parasitic source inductance for clean switching waveforms.
Typical applications span telecom/server SMPS power factor correction (PFC) boost stages, LLC half-bridge primary switches, two-transistor forward (TTF) converters, solar inverters, and industrial motor drives. Compared to planar MOSFETs, the C7 family typically halves switching losses in the 600 V class, allowing designers to either raise switching frequency (smaller magnetics) or push power density higher within the same thermal envelope. The IPL60R125C7AUMA1 in particular sits in the mid-current tier of the C7 family, making it well-suited to 1-3 kW power stages where its 125 mOhm on-resistance and 17 A rating align well with typical CCM PFC inductor ripple currents.
When designing with this part, pay close attention to gate-drive voltage and layout. CoolMOS C7 is fully enhanced at +10 V VGS (typical Vth around 3.5 V), so a standard gate-drive supply of 10-12 V is appropriate. The PG-VSON-4 source-pin layout minimizes common-source inductance; nevertheless the gate loop should be kept small with a 10 Ohm-47 Ohm gate resistor to dampen ringing. Thermal design must account for the fact that RDS(on) increases with temperature, so worst-case thermal analysis at 100 C junction is recommended.
This page synthesizes Infineon distributor pricing (as of 2026-09-15), drop-in alternatives in the same PG-VSON-4 footprint, and practical design notes not found in the bare manufacturer datasheet, including thermal, PCB layout, and gate-drive guidance.
کے لیے ڈراپ اِن متبادل IPL60R125C7AUMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPL60R125C7AUMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Drain-Source Voltage (VDS), Technology.
IPL60R125C7
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPL60R125C7AUMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| FET Type | N-Channel |
| Technology | CoolMOS (superjunction) |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc) | 17 A |
| On-State Resistance (RDS(on), max) | 125 mOhm |
| Power Dissipation (PD, Tc) | 103 W |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V |
| پیکیج | PG-VSON-4 (surface mount) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 4 (Gate / Drain / Drain / Source) |
| آپریٹنگ درجہ حرارت رینج | -55 C to +150 C (junction) |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (unlimited) |
| Channel Mode | Enhancement |
| Drive Voltage (recommended) | 10 V VGS |
IPL60R125C7AUMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input |
| پن 2 | Drain — Drain terminal (connected to exposed pad) |
| پن 3 | Drain — Drain terminal (connected to exposed pad) |
| پن 4 | Source — Source terminal |
محفوظ آپریٹنگ ایریا (DC, Tj=25C)
عام استعمالات
IPL60R125C7AUMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Telecom/Server PFC Boost Stage, LLC Resonant Half-Bridge Primary, Two-Transistor Forward (TTF) Converter, Solar Inverter DC-DC Boost, Industrial Motor Drive Inverter, Welding and Induction Heating.
Telecom/Server PFC Boost Stage
The IPL60R125C7AUMA1 is purpose-built for 1-3 kW power-factor-correction (PFC) boost stages in server and telecom SMPS, where 600 V bus voltage and hard-switching operation at 65-130 kHz demand the lowest possible switching loss. The CoolMOS C7 family reduces Eoss turn-off loss by roughly 50% versus the prior CoolMOS CP generation, directly improving PFC efficiency by 0.3-0.6% in the 1-3 kW range. The 17 A continuous drain current and 125 mOhm RDS(on) are well matched to CCM-mode inductor ripple currents, while the PG-VSON-4 surface-mount package enables compact, high-density PCB layouts. Use it as the active boost switch in interleaved or single-stage bridgeless totem-pole PFC.
تجویز کردہ
LLC Resonant Half-Bridge Primary
The IPL60R125C7AUMA1 fits the primary-side switch position in LLC resonant half-bridge converters used in server, telecom, and industrial power supplies. CoolMOS C7's low output charge (Qoss) and low gate charge (Qg) minimize the dead-time body-diode conduction losses that dominate LLC efficiency at light load, while the 600 V VDS rating provides adequate margin for 400 V rectified mains. The 125 mOhm on-resistance keeps conduction loss acceptable at 1-2 kW, and the PG-VSON-4 footprint allows tight placement of the two primary switches to minimize commutation loop inductance. Suitable for 1-2.5 kW LLC stages operating at 100-200 kHz resonant frequency.
تجویز کردہ
Two-Transistor Forward (TTF) Converter
The IPL60R125C7AUMA1 is rated for two-transistor forward converter (TTF) primary switches in industrial and telecom isolated DC-DC converters. TTF topology clamps the drain to input voltage (rather than 2x Vin as in single-transistor forward), so the 600 V rating provides comfortable headroom for 400 V rectified mains plus transformer leakage spikes. Each switch sees half the primary current, so the 17 A continuous drain rating easily supports 1-2 kW designs. CoolMOS C7's low Eoss improves light-load efficiency and enables snubber simplification, while the PG-VSON-4 package keeps the primary-side switch area compact for high-density brick converters.
تجویز کردہ
Solar Inverter DC-DC Boost
In solar string inverters, the IPL60R125C7AUMA1 can serve as the high-side switch in DC-DC boost or HERIC inverter bridges operating from PV panel voltages up to 600 V. The CoolMOS C7 family delivers low switching loss at 50-100 kHz, which is critical to maximize inverter efficiency across a wide load range. The 17 A continuous drain rating supports 5-10 kW residential string inverters when paralleled with one additional device, and the PG-VSON-4 footprint enables compact PCB designs that fit in NEMA-rated enclosures. RoHS compliance and 150 C junction rating support outdoor long-life operation.
تجویز کردہ
Industrial Motor Drive Inverter
The IPL60R125C7AUMA1 suits the high-side or low-side switch position in 3-phase industrial motor drive inverter bridges (up to 480 V AC mains). CoolMOS C7's low on-resistance and low Qg improve inverter efficiency and reduce thermal stress on the heatsink, while 17 A continuous drain rating supports 3-5 HP (2.2-3.7 kW) drives at typical 8 kHz-16 kHz PWM switching. The PG-VSON-4 surface-mount package is well-suited to FR4-based inverter power modules where compact layout and high isolation spacing are priorities. Industrial temperature range to 150 C junction allows operation in enclosed cabinets.
تجویز کردہ
Welding and Induction Heating
The IPL60R125C7AUMA1 fits hard-switched or zero-voltage-switching (ZVS) high-frequency stages in induction heating cooktops and small industrial welding inverters operating from rectified 400 V mains. CoolMOS C7's low Eoss reduces turn-off loss in resonant ZVS operation, enabling higher switching frequencies (50-200 kHz) that shrink magnetic components and improve power density. The 17 A continuous drain and 125 mOhm on-resistance support 2-4 kW output power, while the PG-VSON-4 surface-mount package is favored for SMD-based inverter modules. Designers should add adequate snubbing to manage leakage-inductance spikes during turn-off.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPL60R125C7AUMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPL60R125C7 | IPB65R125C7ATMA2 | IPI60R125C7 |
|---|---|---|---|---|
| Package | PG-VSON-4 | PG-VSON-4 - same | TO-263 (D2PAK) - different | PG-TO-262 (I2PAK) - different |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 650 V | 600 V |
| Continuous Drain Current (ID, Tc) | 17 A | 17 A | 17 A | 17 A |
| On-Resistance (RDS(on), max) | 125 mOhm | 125 mOhm | 125 mOhm | 125 mOhm |
| Power Dissipation (Tc) | 103 W | 103 W | 105 W | 104 W |
| Technology | CoolMOS C7 (superjunction) | CoolMOS C7 (superjunction) | CoolMOS C7 (superjunction) | CoolMOS C7 (superjunction) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount (D2PAK) | Through-Hole (I2PAK) |
اہم امتیازی خصوصیات
- Surface-mount PG-VSON-4 footprint enables compact, low-profile designs (بمقابلہIPB65R125C7ATMA2 (TO-263 D2PAK))
- CoolMOS C7 superjunction technology minimizes switching loss (بمقابلہSTB28N60DM2 (MDmesh DM2 planar))
- 125 mOhm RDS(on) is well matched to 1-3 kW power stages (بمقابلہSTL33N60M2 (lower RDS(on), higher ID))
ڈیزائن نوٹس
Estimated: at full 17 A load, conduction loss equals I^2 x RDS(on) = 17^2 x 0.125 = 36 W. With PG-VSON-4 and proper PCB thermal-via layout (junction-to-ambient ~50 C/W), the junction temperature rises about 50 C above 25 C ambient, easily within the 150 C max. Designers should still de-rate to 50-70% of rated current in continuous operation to keep Tj below 100 C for long-term reliability. Use Infineon's application note AN-2015-04 CoolMOS C7 thermal design guidelines.
The PG-VSON-4 package requires thermal vias under the exposed drain pad (typically 9-16 vias of 0.3 mm diameter) connecting to inner copper planes. The gate loop area must be minimized: route the gate drive return path directly from the source pin (Pin 4) back to the gate-driver ground to avoid common-source inductance that slows switching and causes ringing. Keep drain and source copper pours as large as practical to maximize heat spreading. Reference Infineon PG-VSON-4 land-pattern application note.
Use a 10 Ohm-22 Ohm gate resistor in series with the gate pin to dampen parasitic ringing during fast switching transitions. Place a 100 kOhm gate-to-source pull-down resistor to ensure the MOSFET stays off if the gate driver loses supply. Place a 1 nF-10 nF ceramic bypass capacitor close to the gate-driver supply pin (VDD). Keep high-current drain loops (input cap -> drain -> source -> input cap GND) tight to minimize commutation loop inductance and voltage overshoot.
Do not exceed the absolute maximum VDS of 600 V - account for transformer leakage inductance spikes (typically 30-50% above nominal). Use a TVS clamp or RCD snubber across the primary to limit spike voltages. Do not parallel IPL60R125C7AUMA1 devices without gate-source resistor balancing, as threshold-voltage mismatch can cause current imbalance. Avoid body-diode hard commutation in bridge topologies; CoolMOS C7 body diode is optimized for PFC and is NOT suitable for full-bridge ZVS transition without external Schottky anti-parallel diodes.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade part. For automotive OBC and inverter applications, consider the corresponding automotive-qualified part in the same CoolMOS C7 family.
