MRF6S9160HR3 vs MRF6S9160HSR3 So sánh
So sánh chi tiết song song của MRF6S9160HR3 bằng NXP Semiconductors và MRF6S9160HSR3 bằng NXP Semiconductors. So sánh các thông số quan trọng, thông số điện tử, gói gọn, trạng thái vòng đời, giá cả và khả năng cung cấp để xác định linh kiện tốt nhất cho yêu cầu thiết kế của bạn.
NXP Semiconductors
MRF6S9160HR3 - 880MHz 35W RF Power MOSFET | NXP/Freescale
MRF6S9160HR3 ✓ Hoạt độngNXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Lần mua cuốiSo sánh thông số kỹ thuật
| Tham số | MRF6S9160HR3 | MRF6S9160HSR3 |
|---|---|---|
| Thương hiệu | NXP Semiconductors | NXP Semiconductors |
| Danh mục | MOSFETs | MOSFETs |
| Trạng thái vòng đời | Hoạt động | Lần mua cuối |
| Technology | RF Power MOSFET (lateral N-channel, enhancement mode) | — |
| Frequency Band | 880 MHz (single-band cellular UHF) | — |
| Operating Frequency Range | [DATA_NEEDED: full datasheet frequency range] | — |
| Drain-Source Voltage (VDSS) | [DATA_NEEDED: VDSS rating] | — |
| Supply Voltage (VDD) | 28 V (typical operation) | — |
| Average Output Power (Pout avg) | 35 W (N-CDMA, 880 MHz) | — |
| Peak Output Power (Pout peak) | [DATA_NEEDED: peak Pout rating] | — |
| Power Gain (Gp) | 20.9 dB (typical at 880 MHz) | — |
| Drain Efficiency (ηD) | [DATA_NEEDED: efficiency at rated Pout] | — |
| Quiescent Bias Current (IDQ) | 1.2 A (typical) | — |
| Hộp / Vỏ | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged | — |
| Kiểu lắp đặt | Chassis/Surface flange mount (screw-down) | Flange / Chassis Mount with screw holes |
| Configuration | Single (single-ended, common-source) | — |
| Operating Mode | Enhancement mode, Class AB | — |
| Test Signal | Single N-CDMA | — |
| Maximum Power Dissipation | 565 W (absolute, per Partstack parametric record) | — |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| Trạng thái RoHS | unknown | — |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | — |
| Kiểu transitor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | — | RF Power Amplifier |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| Power Gain | — | 20.9 dB typical at 880 MHz |
| Drain Efficiency | — | 31% typical at 880 MHz |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Hộp | — | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |