1ED020I12B2XUMA1 vs 2ED3140MC12LXUMA1 比較

詳細並排比較 1ED020I12B2XUMA1 由 Infineon 與 2ED3140MC12LXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED3140MC12LXUMA1 2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon

2ED3140MC12LXUMA1 ✓ 啟用中

規格比較

參數 1ED020I12B2XUMA1 2ED3140MC12LXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) Capacitive coupling (coreless transformer)
Isolation Voltage (Vrms) 4500 Vrms 5700 Vrms
Number of Channels 1 2
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封裝 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-14-71 (DSO-14 wide-body, 300 mil)
Creepage Distance 8 mm >8 mm (per package)
工作溫度 -40 °C to +125 °C —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
Product Type — Isolated Gate Driver
拓撲 — Dual-channel, half-bridge capable
Peak Source Current — 6 A
Peak Sink Current — 6.5 A
UVLO Threshold — 8.5 V
Supported Switches — IGBT, MOSFET, SiC MOSFET up to 2300 V
Dead-Time Control — Integrated, resistor-programmable
工作溫度範圍 — [DATA_NEEDED: operating temperature]
Propagation Delay — [DATA_NEEDED: propagation delay]
Safety Certification — UL 1577 recognized
Lead-Free / RoHS — Yes / Compliant
Channel Configuration — Independent or half-bridge

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