1ED3127MU12FXUMA1 vs 1ED3122MC12HXUMA1 比較

詳細並排比較 1ED3127MU12FXUMA1 由 Infineon 與 1ED3122MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 啟用中
Infineon
1ED3122MC12HXUMA1 1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 ✓ 啟用中

規格比較

參數 1ED3127MU12FXUMA1 1ED3122MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel isolated gate driver —
輸出數量 1 —
輸出配置 High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns 30 ns
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
工作溫度範圍 -40C to +125C —
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
封裝 PG-DSO-8-72 (SOIC-8 wide-body) PG-DSO-8-66 (300-mil DSO-8)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Drives IGBT, MOSFET, SiC MOSFET —
Product Type — Isolated Gate Driver (single-channel)
Isolation Technology — Coreless Transformer (CT)
Isolation Voltage (Vrms) — 5.7 kVrms
Maximum Transient Isolation (Vpk) — 8 kVpk
Output Current (source / sink) — 10 A / 9 A
Configuration — High-side, non-inverting
Number of Channels — 1
Supply Voltage (VCC / VBS) — 8 V to 35 V
Rise Time / Fall Time (typ.) — 15 ns / 30 ns
Miller Clamp — Active (integrated)
Short-Circuit Clamping — Yes
UVLO — Primary and secondary side
工作溫度 — -40 C to +125 C
MSL 等級 — 2

資料表與資源

瀏覽所有產品 建立 BOM 索取報價