2EDN7434RXTMA1 vs 2EDR8258XXUMA1 比較

詳細並排比較 2EDN7434RXTMA1 由 Infineon 與 2EDR8258XXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDN7434RXTMA1 2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 ✓ 啟用中

規格比較

參數 2EDN7434RXTMA1 2EDR8258XXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family EiceDRIVER 2EDN —
Driver Configuration Dual-channel low-side —
Number of Drivers 2 —
Peak Output Current 5 A (source/sink) —
Rated Output Current 4 A —
Output Resistance (Low) [DATA_NEEDED: output resistance Ron low] —
Output Resistance (High) [DATA_NEEDED: output resistance Ron high] —
Propagation Delay (Typ.) 19 ns —
Input Logic Compatibility LV-TTL, non-inverting —
Absolute Max Input Voltage -12 V to +22 V —
Supply Voltage Range [DATA_NEEDED: VDD range] —
封裝 PG-TSSOP-8 (3.0 x 3.0 mm) PG-DSO-14 (14-pin)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature] -40 °C to +125 °C
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] —
Active Output Voltage Clamping Yes —
Product Type — Isolated single-channel gate driver
Isolation Technology — Magnetic (coreless transformer) coupling
Number of Channels — 1
輸出數量 — 2 (high-side and low-side, half-bridge)
Peak Source Current — 5 A
Peak Sink Current — 9 A
Galvanic Isolation (rms) — 5700 Vrms
Galvanic Isolation (peak) — 8000 Vpk
Common-Mode Transient Immunity (CMTI) — 150 V/ns
Propagation Delay (typical) — 38 ns
Driver Supply Voltage (VCC, VBS) — 8 V to 20 V
Input Supply Voltage (VDD) — 3 V to 5.5 V
Protection Features — UVLO (VCC/VBS), DESAT short-circuit, enable/shutdown, dead-time control, interleaving protection
Logic Input — Non-inverting, CMOS compatible

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