2SJ74-BL vs 2SJ74-GR 比較

詳細並排比較 2SJ74-BL 由 Toshiba 與 2SJ74-GR 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2SJ74-BL 2SJ74-GR
品牌 Toshiba Toshiba
類別 Transistors Transistors
生命週期狀態 啟用中 停產終止
電晶體類型 P-Channel JFET (depletion mode) JFET (Junction Field-Effect Transistor)
Drain-Source Breakdown Voltage (VGDS) -25 V —
Drain-Source Current (IDSS), BL grade 6 mA to 12 mA —
Total Power Dissipation (PD) 400 mW —
Gate-Source Voltage (max) [DATA_NEEDED: Gate-Source Voltage VGSO] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] [DATA_NEEDED: input capacitance]
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Input Resistance (Rgss) [DATA_NEEDED: Rgss] —
Transfer Admittance (Yfs) [DATA_NEEDED: Yfs] —
Noise Figure (NF) [DATA_NEEDED: Noise Figure NF] —
封裝 TO-92 (Toshiba 2-5F1A, SC-43), 3-pin 2-5F1D (SC-43), 3 PIN
安裝類型 Through-Hole Through Hole
Number of Units in IC 1 1
Channel Type P —
Applications Low noise audio amplifier, first stages of EQ amplifiers and MC head amplifiers —
工作溫度 [DATA_NEEDED: Operating Temperature Range] —
Polarity — P-Channel
Technology — Silicon P Channel Junction Type
Maximum Power Dissipation (PD) — 400 mW
Grade Suffix — GR (Idss grade classification)
Recommended Application — First stages of EQ amplifiers and M.C. head amplifiers
Configuration — Single FET
Gate-Drain Breakdown Voltage (VGDS) — [DATA_NEEDED: gate-drain breakdown voltage]
Drain-Source Voltage (VDSS) — [DATA_NEEDED: drain-source voltage]
Zero-Gate Drain Current (IDSS) — [DATA_NEEDED: IDSS range for GR grade]
Gate-Source Cutoff Voltage (VGS(off)) — [DATA_NEEDED: gate-source cutoff voltage]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]

資料表與資源

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