A3PE3000L-FGG896I vs A3PE3000L-FG896I 比較
詳細並排比較 A3PE3000L-FGG896I 由 Microchip Technology 與 A3PE3000L-FG896I 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Microchip Technology
A3PE3000L-FGG896I - 3M Gate Low Power Flash FPGA | Microchip
A3PE3000L-FGG896I ✓ 啟用中Microchip Technology
A3PE3000L-FG896I - ProASIC3L Flash FPGA 620 I/O | Microchip
A3PE3000L-FG896I ✓ 啟用中規格比較
| 參數 | A3PE3000L-FGG896I | A3PE3000L-FG896I |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | ProASIC3L | ProASIC3L (Low Power Flash FPGA) |
| System Gates | 3000000 | 3000000 |
| Total RAM Bits | 516096 bits | — |
| Embedded Memory Type | True Dual-Port SRAM (504 kbits) | — |
| Number of I/O | 620 | — |
| 供應電壓 | 1.14 V to 1.575 V | — |
| Core Voltage Support | 1.2 V to 1.5 V | — |
| Logic Family / Process | CMOS, 130-nm, 7-layer metal (6 copper), flash-based | — |
| Configuration Technology | Nonvolatile Flash, Live-at-Power-Up Level 0 | — |
| Special Features | Flash*Freeze technology, single-chip solution | — |
| 封裝 / 外殼 | 896-BGA (FBGA, 1 mm pitch) | — |
| 安裝類型 | Surface Mount (SMD/SMT) | Surface Mount |
| 工作溫度 | Industrial grade (I suffix) | — |
| Packaging | Tray, standard quantity 27 | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | RoHS Non-Compliant (per distributor listing) |
| Speed Grade | Standard (no speed suffix) | [DATA_NEEDED: speed grade / grade code] |
| Logic Cells | — | 75264 |
| User I/O | — | 620 |
| Core Voltage | — | 1.2 V to 1.5 V |
| I/O Voltage (minimum) | — | 1.2 V |
| Configuration Memory | — | On-chip Flash (single-chip, nonvolatile) |
| Low Power Feature | — | Flash*Freeze technology (40% dynamic / 50% static power reduction) |
| 封裝 | — | 896-BGA (FBGA-896) |
| Temperature Grade | — | Industrial (-I suffix) |
| Reprogrammability | — | Yes (in-system reprogrammable) |
| Lead Free Status | — | Contains Lead (per distributor listing) |
| 工作溫度範圍 | — | [DATA_NEEDED: exact operating temperature range in C] |
| Embedded Memory | — | [DATA_NEEDED: embedded SRAM block capacity] |