AUIRF7640S2TR vs ISA250300C04LMDSXTMA1 比較

詳細並排比較 AUIRF7640S2TR 由 Infineon 與 ISA250300C04LMDSXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ 啟用中

規格比較

參數 AUIRF7640S2TR ISA250300C04LMDSXTMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) @ TA=25C 5.8 A —
Continuous Drain Current (ID) @ TC=25C 21 A —
Power Dissipation (PD) @ TA=25C 2.4 W —
Power Dissipation (PD) @ TC=25C 30 W —
On-Resistance RDS(on) 36 mΩ [DATA_NEEDED: RDS(on) per channel at specified VGS]
Total Gate Charge (Qg) 7.3 nC —
封裝 DirectFET SB (Surface Mount) SO-8 (PG-DSO-8-920)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +150C [DATA_NEEDED: junction temp upper limit] [DATA_NEEDED: operating temperature range]
Technology HEXFET Power MOSFET (Automotive Grade) Trench MOSFET (OptiMOS 3)
Automotive Qualification AEC-Q101 (Automotive Grade per datasheet) —
RoHS 狀態 Compliant [DATA_NEEDED: confirmed in datasheet] Compliant
Primary Application Automotive Class D audio amplifier output stage —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Configuration — Dual N-channel + P-channel (N+P array)
Continuous Drain Current N-channel — 5.9 A (Ta), 7.9 A (Tc)
Continuous Drain Current P-channel — 5.8 A (Ta), 7.8 A (Tc)
Power Dissipation — 1.4 W (Ta), 2.5 W (Tc)
Packaging — Tape & Reel (suffix XTMA1)
Datasheet Document — Infineon ISA250300C04LMDS datasheet (per Infineon product page)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range per channel]
Lead-Free — Yes

資料表與資源

瀏覽所有產品 建立 BOM 索取報價