BFU520AR vs BFU520XR 比較

詳細並排比較 BFU520AR 由 NXP Semiconductors 與 BFU520XR 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
BFU520AR BFU520AR - NPN RF Transistor 12V 30mA 10GHz | NXP

BFU520AR - NPN RF Transistor 12V 30mA 10GHz | NXP

BFU520AR ✓ 啟用中
NXP Semiconductors
BFU520XR BFU520XR - NPN RF Transistor 2GHz SOT143R | NXP

BFU520XR - NPN RF Transistor 2GHz SOT143R | NXP

BFU520XR ✓ 啟用中

規格比較

參數 BFU520AR BFU520XR
品牌 NXP Semiconductors NXP Semiconductors
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
電晶體類型 NPN wideband silicon RF BJT —
Collector-Emitter Breakdown Voltage (VCEO) 12 V —
Continuous Collector Current (IC) 30 mA —
轉換頻率 (ft) 10 GHz —
Total Power Dissipation (Ptot) 450 mW —
封裝 SOT-23 (TO-236AB), 3-pin SOT143R (4-pin, plastic, dual emitter)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +150C [DATA_NEEDED: operating temperature]
Qualification AEC-Q101 (automotive qualified per distributor listing) —
Product Family BFU5 wideband RF transistor family —
Intended Application Band Small signal to medium power up to 2 GHz —
Polarity NPN NPN
Noise Figure [DATA_NEEDED: noise figure] —
DC Current Gain (hFE) [DATA_NEEDED: hFE] —
RoHS 狀態 [DATA_NEEDED: RoHS status] —
Packaging Reel (R suffix, tape and reel) —
Technology — Silicon wideband RF BJT
Family — BFU5
Maximum Operating Frequency — 2 GHz
Continuous Collector Current — 0.05 A (50 mA)
Application Band — L Band
Number of Elements — 1
Configuration — Single NPN, dual emitter pins
Typical Application — High speed, low noise amplification
集極-射極電壓 (Vceo) — [DATA_NEEDED: VCEO]
轉換頻率 (ft) — [DATA_NEEDED: fT]
Noise Figure NF — [DATA_NEEDED: NF]
Total Power Dissipation Ptot — [DATA_NEEDED: Ptot]
Ordering Suffix — XR

資料表與資源

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