BSC021N08NS5ATMA1 vs BSC072N08NS5ATMA1 比較

詳細並排比較 BSC021N08NS5ATMA1 由 Infineon 與 BSC072N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 啟用中

規格比較

參數 BSC021N08NS5ATMA1 BSC072N08NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC021N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench) OptiMOS 5
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tc=25°C) 226 A —
Continuous Drain Current (I_D, Tc=100°C) 100 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max (V_GS=10 V) 2.1 mΩ —
Gate-Source Voltage V_GS max ±20 V —
Power Dissipation P_D (Tc=25°C) 214 W —
工作接面溫度 -55 °C to +175 °C —
封裝 SuperSO8 5x6 (PG-TSON-8-3) PG-TDSON-8-7 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
Total Gate Charge Q_G typ [DATA_NEEDED: total gate charge] —
R_thJC thermal resistance max [DATA_NEEDED: R_thJC] —
RoHS 狀態 Compliant (Pb-free) Compliant
MSL 等級 MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes (single-pulse) —
Delivery Form Tape & Reel (T&R) —
Part Family — BSC072N08NS5 (OptiMOS 5)
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) at Tc — 74 A
Drain-Source On-Resistance (RDS(on)) Max — 7.2 mOhm at VGS=10V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
工作溫度範圍 — [DATA_NEEDED: full min/max operating Tj]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Shipping Pack — Tape & Reel (ATMA1)
Standard Pack Quantity — 5000

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