BSC050N03LSGATMA1 vs BSZ130N03LSGATMA1 比較
詳細並排比較 BSC050N03LSGATMA1 由 Infineon 與 BSZ130N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC050N03LSGATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| 封裝 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C | -55 C to +150 C (junction) |
| Channel Type | N-Channel | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| Part Family | — | OptiMOS 25V / 30V |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| 連續汲極電流 (TC=25°C) | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |