BSS316NH6327XTSA1 vs BSL207SPH6327XTSA1 比較
詳細並排比較 BSS316NH6327XTSA1 由 Infineon 與 BSL207SPH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS316NH6327XTSA1 | BSL207SPH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel, Enhancement Mode | P-Channel |
| Technology | OptiMOS 2 (Trench) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| 工作接面溫度範圍 | -55 C to +150 C | — |
| 封裝 | PG-SOT23 (SOT-23-3) | TSOP-6 (PG-TSOP6-6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL 等級 | MSL1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Drain to Source Voltage (VDS) | — | -20 V |
| Continuous Drain Current (ID) at 25C | — | 6 A (Ta) |
| Power Dissipation (PD) | — | 2 W (Ta) |
| RDS(on) Max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) max @ VGS=-4.5V] |
| RDS(on) Max @ VGS = -2.5 V | — | [DATA_NEEDED: RDS(on) max @ VGS=-2.5V] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 2.5 V, 4.5 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| 工作溫度 | — | -55C to +150C |
| Series | — | OptiMOS™ |
| 腳位數 | — | 6 |