BSZ150N10LS3GATMA1 vs BSC0906NSATMA1 比較
詳細並排比較 BSZ150N10LS3GATMA1 由 Infineon 與 BSC0906NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ150N10LS3GATMA1 | BSC0906NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ150N10LS3GATMA1 | — |
| Technology / Family | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| 功率耗散 (TC=25°C) | 63 W | — |
| 封裝 | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| MSL 等級 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology | — | OptiMOS |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| 工作溫度範圍 | — | -55C to +150C (junction, typical) |
| 腳位數 | — | 8 |