EP2S60F1020C4TT vs EP2S130F1020C4N 比較
詳細並排比較 EP2S60F1020C4TT 由 Intel 與 EP2S130F1020C4N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP2S60F1020C4TT | EP2S130F1020C4N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 最後購買 | 最後購買 |
| Family | Stratix II | Stratix II |
| Process Technology | 90 nm | 90 nm CMOS |
| Logic Elements | 60,440 | 132,540 |
| Equivalent Logic Elements | 60,440 | — |
| Embedded Memory (bits) | 2,544,192 | — |
| Maximum User I/O | 718 | 742 |
| DSP Blocks (18x18 multipliers) | [DATA_NEEDED: DSP block count for EP2S60] | — |
| PLLs (Enhanced) | [DATA_NEEDED: PLL count] | — |
| Global Clock Networks | [DATA_NEEDED: global clock count] | — |
| 封裝 | 1020-ball FineLine BGA | 1020-ball FC-FBGA |
| 安裝類型 | Surface Mount (BGA) | Surface Mount (BGA) |
| 工作接面溫度 | 0C to +85C (commercial, C4 speed grade) | — |
| Speed Grade | C4 | C4 (commercial) |
| Supply Voltage Core | [DATA_NEEDED: VCCINT nominal] | — |
| Memory Interfaces Supported | DDR/DDR2 SDRAM, QDR II/II+ SRAM | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance] | Compliant |
| LE Conversion Note | 60,440 LEs is the legacy 'equivalent LE' figure; modern ALM-based naming differs | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | 3 (per JEDEC J-STD-020, typical for FC-BGA) |
| Total Memory Bits | — | 6,747,840 |
| Logic Array Blocks (LABs) | — | 6,627 |
| Core Voltage (VCCINT) | — | 1.2 V |
| 工作溫度 | — | 0C to +85C (commercial, inferred from C grade) |
| Maximum Internal Frequency | — | 711.24 MHz |
| Configuration Method | — | JTAG / Passive Serial / Active Serial |
| Design Tool | — | Quartus II (legacy, up to v13.0sp1) |