EP3C80F780C8N vs EP3CLS150F780C7N 比較
詳細並排比較 EP3C80F780C8N 由 Intel 與 EP3CLS150F780C7N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3C80F780C8N | EP3CLS150F780C7N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | Cyclone III | — |
| Device Type | FPGA - Field Programmable Gate Array | — |
| Logic Elements | 81,264 | — |
| Total RAM Bits | 2,810,880 bits | — |
| Embedded Multipliers | 244 (18x18) | — |
| User I/O | 429 | — |
| PLLs | 4 | — |
| Internal Frequency (max) | 472 MHz | — |
| 腳位數 | 780 | — |
| 封裝 | 780-BGA (FBGA), 29 x 29 mm, 1.0 mm pitch | 780-ball FBGA (29x29 mm, 1.0 mm pitch) |
| Package Height | 2.60 mm | — |
| 安裝類型 | Surface Mount | — |
| Lead Free / RoHS | Yes (lead-free) | — |
| Process Node | 60 nm TSMC low-k | — |
| Operating Temperature Grade | Commercial (C) | — |
| Speed Grade | 8 | C7 (commercial, -7 speed grade) |
| Device Family | — | Cyclone III LS |
| Logic Elements (LEs) | — | 150,848 |
| Logic Array Blocks (LABs) | — | 9,428 |
| Embedded Memory (M9K blocks) | — | 5,994 Kbits |
| Embedded Multipliers (18x18) | — | 320 |
| Maximum User I/O Pins | — | 413 |
| Phase-Locked Loops (PLLs) | — | 4 |
| Process Technology | — | 65 nm CMOS |
| Core Supply Voltage | — | 1.2 V |
| Maximum Operating Frequency | — | 437.5 MHz |
| External Memory Interfaces | — | DDR2 SDRAM, QDRII+ SRAM |
| Configuration Methods | — | JTAG, Active Serial (AS), Passive Serial (PS) |
| 工作溫度 | — | 0C to +85C (commercial) |
| RoHS 狀態 | — | Compliant |