GD3160 vs GD3162 比較

詳細並排比較 GD3160 由 NXP Semiconductors 與 GD3162 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
GD3162 GD3162 - Isolated IGBT/SiC Gate Driver with SPI | NXP

GD3162 - Isolated IGBT/SiC Gate Driver with SPI | NXP

GD3162 ✓ 啟用中

規格比較

參數 GD3160 GD3162
品牌 NXP Semiconductors NXP Semiconductors
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Single-channel isolated gate driver for IGBT and SiC MOSFETs Advanced galvanically isolated single-channel IGBT/SiC gate driver
Isolation Type Integrated galvanic isolation Galvanic isolation (integrated)
Number of Channels 1 1
Configuration Interface SPI (programmable) SPI (programmable)
Output Stage Low on-resistance drive transistors, rail-to-rail gate control —
Peak Source Current [DATA_NEEDED: peak source current] —
Peak Sink Current [DATA_NEEDED: peak sink current] —
Desaturation Protection Yes (programmable) —
Overtemperature Protection Yes (programmable) —
Current Sense Protection Yes (programmable) —
Primary Application xEV traction inverters, OBC, DC-DC converters xEV traction inverters
Functional Safety Support Yes (per NXP product page) —
封裝 [DATA_NEEDED: exact package code] [DATA_NEEDED: package type]
安裝類型 Surface Mount —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Isolation Voltage [DATA_NEEDED: isolation voltage] [DATA_NEEDED: isolation rating]
Target Power Devices — SiC MOSFET and IGBT/SiC modules
Dynamic Gate Strength Adjust — Yes, via SPI or GS Enable pins
Integrated Boost Capability — Yes
Protection Features — Overtemperature, desaturation (DESAT), current sense
Fault Management — Autonomous, with fault and status reporting
最大輸出電流 — [DATA_NEEDED: peak source/sink current]
Supply Voltage Range — [DATA_NEEDED: supply voltage range]
工作溫度 — [DATA_NEEDED: operating temperature range]
Switching Speed Tuning — Programmable gate drive shaping

資料表與資源

瀏覽所有產品 建立 BOM 索取報價