IAUC120N04S6N009ATMA1 vs IAUCN04S7N015GATMA1 比較

詳細並排比較 IAUC120N04S6N009ATMA1 由 Infineon 與 IAUCN04S7N015GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 啟用中
Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 啟用中

規格比較

參數 IAUC120N04S6N009ATMA1 IAUCN04S7N015GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 120 A —
脈衝汲極電流 [DATA_NEEDED: pulsed I_D value] —
R_DS(on) max @ V_GS=10V 0.9 mΩ —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: V_GS(th) typical value] —
Total Gate Charge Q_g typ [DATA_NEEDED: Q_g typical] —
Power Dissipation (Tc) 150 W —
Thermal Resistance R_thJC max 1.0 K/W —
工作接面溫度 -55 °C to +175 °C -55C to +175C
封裝 PG-TDSON-8-33 (5x6 mm) PG-THSOG-4-1 (SSO4G 5x6) surface mount
安裝類型 Surface Mount Surface Mount (IMS-compatible source-down)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
MSL 等級 1 1 (per JEDEC J-STD-020)
RoHS Compliant —
Lead-Free / Halogen-Free Yes (per Infineon product page) —
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
RoHS 狀態 — Compliant

資料表與資源

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