IAUC120N04S6N010ATMA1 vs IAUC60N04S6L030HATMA1 比較
詳細並排比較 IAUC120N04S6N010ATMA1 由 Infineon 與 IAUC60N04S6L030HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC120N04S6N010ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | — |
| 封裝 | PG-TDSON-8-34 (5x6 mm leadless) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| 工作溫度範圍 | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| 工作接面溫度 | — | -55 C to +175 C |