IAUC28N08S5L230ATMA1 vs IAUC60N04S6N031HATMA1 比較
詳細並排比較 IAUC28N08S5L230ATMA1 由 Infineon 與 IAUC60N04S6N031HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ 啟用中
規格比較
| 參數 | IAUC28N08S5L230ATMA1 | IAUC60N04S6N031HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | — |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TDSON-8-56 (5 mm x 6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | — |
| Automotive Qualified | Yes (AEC-Q101) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Part Family | — | IAUC (Integrated Automotive Half-Bridge) |
| Process Technology | — | OptiMOS 6 40V |
| Configuration | — | Half-Bridge (2 N-Channel MOSFETs) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tj) | — | 60 A |
| Power Dissipation (P_D, Tc=25C) | — | 75 W |
| R_DS(on) at VGS=10V | — | 3.1 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| 工作溫度範圍 | — | -55 °C to +175 °C (Tj) |
| 腳位數 | — | 8 |
| Automotive Qualification | — | AEC-Q101 |