IAUC41N06S5L100ATMA1 vs IPD90N06S407ATMA2 比較

詳細並排比較 IAUC41N06S5L100ATMA1 由 Infineon 與 IPD90N06S407ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ 啟用中
Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ 啟用中

規格比較

參數 IAUC41N06S5L100ATMA1 IPD90N06S407ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (Trench MOSFET) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作溫度範圍 -55C to +175C —
封裝 PG-TDSON-8-33 (TDSON-8, 5x6 mm) PG-TO252-3-11 (DPAK)
安裝類型 Surface Mount Surface Mount
Channel Type N-Channel —
MSL 等級 [DATA_NEEDED: MSL rating] —
Automotive Qualified Yes (AEC-Q101 automotive grade) —
RoHS 狀態 Compliant —
Interconnect Copper clip (low-inductance) —
FET Type — N-Channel Enhancement Mode
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D at T_C) — 90 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) Max at V_GS=10 V, I_D=90 A — 6.9 mOhm
Gate Threshold Voltage (V_GS(th)) — 4 V at 40 uA
Total Gate Charge (Q_G) at V_GS=10 V — 56 nC
Maximum Power Dissipation (P_D at T_C) — 79 W
工作接面溫度 — -55 C to +175 C
Storage Temperature — [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS — Yes (Green Product)
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 C peak reflow)
Automotive Qualification — AEC-Q101 Qualified
Avalanche Rating — 100% Avalanche Tested

資料表與資源

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