IAUCN04S7L042GATMA1 vs IAUC60N04S6L030HATMA1 比較

詳細並排比較 IAUCN04S7L042GATMA1 由 Infineon 與 IAUC60N04S6L030HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7L042GATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
封裝 PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
安裝類型 Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
工作溫度範圍 -55C to +175C (Tj) —
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
RoHS 狀態 Compliant Compliant
MSL 等級 1 1 (per JEDEC J-STD-020)
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
工作接面溫度 — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

資料表與資源

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