IAUCN04S7N015GATMA1 vs IAUC120N04S6N009ATMA1 比較

詳細並排比較 IAUCN04S7N015GATMA1 由 Infineon 與 IAUC120N04S6N009ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 啟用中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7N015GATMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
封裝 PG-THSOG-4-1 (SSO4G 5x6) surface mount PG-TDSON-8-33 (5x6 mm)
工作接面溫度 -55C to +175C -55 °C to +175 °C
Automotive Qualification AEC-Q101 qualified AEC-Q101
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
RoHS 狀態 Compliant —
安裝類型 Surface Mount (IMS-compatible source-down) Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) 1
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脈衝汲極電流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

資料表與資源

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