IAUZN08S7L177ATMA1 vs IAUCN08S7L033ATMA1 比較
詳細並排比較 IAUZN08S7L177ATMA1 由 Infineon 與 IAUCN08S7L033ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUZN08S7L177ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 7 N-channel power MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) | 35 A (Tj) | — |
| Power Dissipation (PD) | 45 W (Tc) | — |
| On-Resistance (RDS(on)) | 17.7 mΩ max | — |
| 封裝 | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| 工作溫度 | -55C to +175C (Tj, automotive grade) | — |
| Configuration | Single | — |
| Qualification | AEC-Q101 automotive | Automotive Grade (per Infineon datasheet header) |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for this package) |
| Lead-Free | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| 工作溫度範圍 | — | -55°C to +175°C (TJ) |