IGI60L1414B1MXUMA1 vs IGI60L1111B1MXUMA1 比較

詳細並排比較 IGI60L1414B1MXUMA1 由 Infineon 與 IGI60L1111B1MXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IGI60L1414B1MXUMA1 IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 ✓ 啟用中
Infineon
IGI60L1111B1MXUMA1 IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 ✓ 啟用中

規格比較

參數 IGI60L1414B1MXUMA1 IGI60L1111B1MXUMA1
品牌 Infineon Infineon
類別 Transistors MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series CoolGaN™ (IGI family) —
Technology GaN (Gallium Nitride), enhancement-mode GaN (Gallium Nitride), enhancement-mode
Configuration Half-bridge (high-side + low-side switch) Half-Bridge (integrated gate driver + bootstrap diode)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) 6.0 A —
On-Resistance (RDS(on)) 140 mΩ (per switch) —
Gate Driver Integrated (high-side + low-side) —
Level Shifter Integrated high-voltage level shifter —
Bootstrap Diode Integrated ultra-fast low-resistance —
Source Drive Current +0.29 A —
Sink Drive Current -0.7 A —
Turn-On/Turn-Off Application-configurable (external Rg) —
封裝 PG-TFLGA-27-2 PG-TFLGA-27-2 (6 x 8 mm)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 Compliant Compliant
Application Category SMPS, PFC, motor drive, Class-D audio —
On-Resistance (RDS(on), typ) — 110 mΩ
輸出電流 (最大) — 7.4 A
Gate-Drive Supply (VCC) — 10 V to 20 V
Integrated Bootstrap Diode — Yes
PWM Input Logic Level — 3.3 V / 5 V compatible
CoolGaN Generation — G5
MSL 等級 — [DATA_NEEDED: MSL rating]
Lead-Free — Yes

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